Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to
facilitate economic growth in a semiconductor industry that is silicon-based and currently …

GaN-on-Si power switching transistors that use carbon-doped epitaxy are highly vulnerable
to dynamic R ON dispersion, leading to reduced switching efficiency. In this paper, we …

At present, the energy transition is leading to the replacement of large thermal power plants
by distributed renewable generation and the introduction of different assets. Consequently, a …

Insulated-gate GaN-based transistors can fulfill the emerging demands for the future
generation of highly efficient electronics for high-frequency, high-power and high …

With the development of energy efficiency technologies such as 5G communication and
electric vehicles, Si-based GaN microelectronics has entered a stage of rapid …

Current collapse at high drain voltage in a GaN-based transistor is successfully suppressed
by the introduction of p-GaN region which is placed beside the drain of a Gate Injection …

During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …

This paper reports an investigation of the trapping mechanisms responsible for the
temperature-dependent dynamic-R ON of GaN-based metal-insulator-semiconductor (MIS) …

In this paper, we present a systematic investigation of metal–organic chemical vapor
deposition-grown in situ SiN as the gate dielectric and surface passivation for AlGaN/GaN …

A strong positive correlation between dynamic Ron and the ionization of buffer traps by
injection of electrons from the Si substrate is presented. By exploring different Carbon …