[HTML][HTML] Modeling techniques for quantum cascade lasers
C Jirauschek, T Kubis - Applied Physics Reviews, 2014 - pubs.aip.org
Quantum cascade lasers are unipolar semiconductor lasers covering a wide range of the
infrared and terahertz spectrum. Lasing action is achieved by using optical intersubband …
infrared and terahertz spectrum. Lasing action is achieved by using optical intersubband …
A self-consistent full 3-D real-space NEGF simulator for studying nonperturbative effects in nano-MOSFETs
In this paper, we present a full 3-D real-space quantum-transport simulator based on the
Green's function formalism developed to study nonperturbative effects in ballistic …
Green's function formalism developed to study nonperturbative effects in ballistic …
Nonequilibrium Green's function modeling of type-II superlattice detectors and its connection to semiclassical approaches
Theoretical investigations of carrier transport in type-II superlattice detectors have been
mostly limited to simplified semiclassical treatments, due to the computational challenges …
mostly limited to simplified semiclassical treatments, due to the computational challenges …
Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform
The aim of this paper is to present a flexible and open-source multi-scale simulation
software which has been developed by the Device Modelling Group at the University of …
software which has been developed by the Device Modelling Group at the University of …
Size dependence of surface-roughness-limited mobility in silicon-nanowire FETs
S Poli, MG Pala, T Poiroux… - … on Electron Devices, 2008 - ieeexplore.ieee.org
Lateral size effects on surface-roughness-limited mobility in silicon-nanowire FETs are
analyzed by means of a full-quantum 3-D self-consistent simulation. A statistical analysis is …
analyzed by means of a full-quantum 3-D self-consistent simulation. A statistical analysis is …
Quantum-transport study on the impact of channel length and cross sections on variability induced by random discrete dopants in narrow gate-all-around silicon …
In this paper, we review and extend recent work on the effect of random discrete dopants on
the statistical variability in gate-all-around silicon nanowire transistors. The electron …
the statistical variability in gate-all-around silicon nanowire transistors. The electron …
Atomistic simulation of nanowire transistors
At the nanometer scale, the computer simulation of electronic transport cannot be conceived
without including quantum-mechanical effects as well as the atomic granularity of the …
without including quantum-mechanical effects as well as the atomic granularity of the …
Assessment of approximations in nonequilibrium Green's function theory
T Kubis, P Vogl - Physical Review B—Condensed Matter and Materials …, 2011 - APS
A nonequilibrium Green's function (NEGF) method for stationary carrier dynamics in open
semiconductor nanodevices is presented that includes all relevant incoherent scattering …
semiconductor nanodevices is presented that includes all relevant incoherent scattering …
Electrostatically Doped Junctionless Graphene Nanoribbon Tunnel Field-Effect Transistor for High-Performance Gas Sensing Applications: Leveraging Doping Gates …
In this paper, a new junctionless graphene nanoribbon tunnel field-effect transistor (JLGNR
TFET) is proposed as a multi-gas nanosensor. The nanosensor has been computationally …
TFET) is proposed as a multi-gas nanosensor. The nanosensor has been computationally …
Au-MoS2 contacts: Quantum transport simulations using a continuum description
We present a novel method of modeling the contact between a metal and a two-dimensional
semiconductor. Using Au on MoS 2 as an example, we self-consistently solve the …
semiconductor. Using Au on MoS 2 as an example, we self-consistently solve the …