[HTML][HTML] Graphene/gadolinium oxide composite modified screen-printed electrochemical sensor for detection of diclofenac sodium
This study investigates the electrochemical sensing of diclofenac sodium. A bare single
screen-printed carbon electrode was modified with graphene/gadolinium (III) oxide (Gd 2 O …
screen-printed carbon electrode was modified with graphene/gadolinium (III) oxide (Gd 2 O …
Exploring non-stoichiometric SiOx thin film for non-volatile memory application
This article explores the electrical performance of capacitive memory and resistive switching
(RS) devices based on thin films of a single active layer of Silicon oxide (SiO x). The …
(RS) devices based on thin films of a single active layer of Silicon oxide (SiO x). The …
Capacitive and RRAM Forming-Free Memory Behavior of Electron-Beam Deposited Ta2O5 Thin Film for Nonvolatile Memory Application
The present study reports the presence of capacitive memory and forming-free resistive
random access memory (RRAM) in a tantalum pentoxide (Ta2O5) thin film (TF) device. The …
random access memory (RRAM) in a tantalum pentoxide (Ta2O5) thin film (TF) device. The …
GLAD Fabricated Self‐Powered Photodetector Based on WO3 with SiO2 as Interfacial Layer
Photodetectors based on one‐dimensional structures have recently attracted great interest
due to their high surface‐to‐volume ratio and light‐trapping efficiency. In this study, a self …
due to their high surface‐to‐volume ratio and light‐trapping efficiency. In this study, a self …
Improved performance for Ag nanoparticles-assisted HfO2 thin film-based memcapacitive device
In this article, we have reported the deposition of Ag nanoparticles assisted HfO 2 thin film-
based device with an Au electrode using GLAD-assisted conventional electron beam …
based device with an Au electrode using GLAD-assisted conventional electron beam …
Effect of annealing on crystallinity and electrical properties of Bi1. 5MgNb1. 5O7 thin films
M Zhang, Z Xiang, Y Hong - Ceramics International, 2024 - Elsevier
Tunable dielectric materials have extensive applications in various fields; however, existing
materials incorporate toxic elements or exhibit poor performance. Bi 1.5 MgNb 1.5 O 7 …
materials incorporate toxic elements or exhibit poor performance. Bi 1.5 MgNb 1.5 O 7 …
Improvement of capacitive and resistive memory in WO3 thin film with annealing
In this study, electron beam evaporated tungsten oxide (WO3) thin film (TF) has been
investigated for both capacitive and resistive switching memory devices. The fabricated …
investigated for both capacitive and resistive switching memory devices. The fabricated …
High-temperature sensitivity complex dielectric/electric modulus, loss tangent, and AC conductivity in Au/(S: DLC)/p-Si (MIS) structures
Abstract Complex dielectric (ε*= ε′− jε ″)/electric modulus (M*= M′+ jM ″), loss tangent
(tan δ), and ac conductivity (σ ac) properties of Au/(S-DLC)/p-Si structures were investigated …
(tan δ), and ac conductivity (σ ac) properties of Au/(S-DLC)/p-Si structures were investigated …
Influence of ionizing radiation on admittance measurements of Au/TiO2/n-Si (MIS) capacitor
M İzdeş, R Ertuğrul Uyar, A Tataroğlu - Journal of Materials Science …, 2024 - Springer
This study aimed to investigate the influence of ionizing radiation on the admittance
measurements of Titanium dioxide (TiO2)-based metal-insulator-semiconductor (MIS) …
measurements of Titanium dioxide (TiO2)-based metal-insulator-semiconductor (MIS) …
Design of non-volatile capacitive memory using axial type-II heterostructure nanowires of NiO/β-Ga2O3
MC Pedapudi, JC Dhar - Journal of Materials Science: Materials in …, 2024 - Springer
The study presents a non-volatile memory (NVM) device created from an axial NiO-nanowire
(NW)/β-Ga2O3-NW heterostructure (HS) using GLAD within the RF/DC sputtering chamber …
(NW)/β-Ga2O3-NW heterostructure (HS) using GLAD within the RF/DC sputtering chamber …