Topological hall transport: Materials, mechanisms and potential applications
Topological Hall effect (THE) and its inverse effect (skyrmion Hall effect) generally occurs in
magnetic materials with topological properties, as a consequence of nonuniform and …
magnetic materials with topological properties, as a consequence of nonuniform and …
Noncollinear Mn3Sn for antiferromagnetic spintronics
X Wang, H Yan, X Zhou, H Chen, Z Feng, P Qin… - Materials Today …, 2022 - Elsevier
In recent years, antiferromagnetic spintronics has attracted enormous attentions due to the
great potential for next-generation picosecond and highly packed information technology …
great potential for next-generation picosecond and highly packed information technology …
Efficient and transferable machine learning potentials for the simulation of crystal defects in bcc Fe and W
Data-driven, or machine learning (ML), approaches have become viable alternatives to
semiempirical methods to construct interatomic potentials, due to their capacity to accurately …
semiempirical methods to construct interatomic potentials, due to their capacity to accurately …
Electric-field-tunable spin polarization and carrier-transport anisotropy in an A-type antiferromagnetic van der Waals bilayer
W Dang, M Zhu, Z Zhu, X Chen, Z Song, J Qi - Physical Review Applied, 2022 - APS
Two-dimensional (2D) magnetic semiconductor materials with the electric-field-tunable spin
polarization and carrier-transport anisotropy are of great significance for the fundamental …
polarization and carrier-transport anisotropy are of great significance for the fundamental …
Pressure controlled trimerization for switching of anomalous Hall effect in triangular antiferromagnet
Here, we present a detailed theoretical and experimental study on the pressure induced
switching of the anomalous Hall effect (AHE) in the triangular antiferromagnetic (AFM) …
switching of the anomalous Hall effect (AHE) in the triangular antiferromagnetic (AFM) …
Effect of residual strain on magnetic properties and Hall effect in chiral antiferromagnet Mn3Sn
JJ Deng, MY Zhao, Y Wang, X Wu, XT Niu… - Journal of Physics D …, 2022 - iopscience.iop.org
Here, the effect of residual strain (RS) generated by uniaxial stress on the magnetic
properties and Hall effect of polycrystalline Mn 3 Sn is investigated. Contrary to the role of …
properties and Hall effect of polycrystalline Mn 3 Sn is investigated. Contrary to the role of …
Design strong anomalous Hall effect via spin canting in antiferromagnetic nodal line materials
The interplay between magnetism and the topological electronic structure provides a large
freedom for designing strong anomalous Hall effect (AHE) materials. A nodal line from band …
freedom for designing strong anomalous Hall effect (AHE) materials. A nodal line from band …
Magnetic States and Electronic Properties of Manganese-Based Intermetallic Compounds Mn2YAl and Mn3Z (Y = V, Cr, Fe, Co, Ni; Z = Al, Ge, Sn, Si, Pt)
VV Marchenkov, VY Irkhin - Materials, 2023 - mdpi.com
We present a brief review of experimental and theoretical papers on studies of electron
transport and magnetic properties in manganese-based compounds Mn2 YZ and Mn3 Z (Y …
transport and magnetic properties in manganese-based compounds Mn2 YZ and Mn3 Z (Y …
Strong magnetoelastic coupling in (, Sn)
We measure the full elastic tensors of Mn 3 Ge and Mn 3 Sn as a function of temperature
through their respective antiferromagnetic phase transitions. Large discontinuities in the bulk …
through their respective antiferromagnetic phase transitions. Large discontinuities in the bulk …
Magnetic interactions in AB-stacked kagome lattices: Magnetic structure, symmetry, and duality
We present the results of an extensive study of the phase diagram and spin-wave excitations
for a general spin model on a hexagonal AB-stacked kagome system. The boundaries of the …
for a general spin model on a hexagonal AB-stacked kagome system. The boundaries of the …