Bias temperature instability of mosfets: Physical processes, models, and prediction
CMOS technology dominates the semiconductor industry, and the reliability of MOSFETs is a
key issue. To optimize chip design, trade-offs between reliability, speed, power …
key issue. To optimize chip design, trade-offs between reliability, speed, power …
A unified perspective of RTN and BTI
It has recently been suggested that random telegraph noise (RTN) and the bias temperature
instability (BTI) are due to similar defects. Here we thoroughly analyze this hypothesis using …
instability (BTI) are due to similar defects. Here we thoroughly analyze this hypothesis using …
Statistical characterization of time-dependent variability defects using the maximum current fluctuation
P Saraza-Canflanca, J Martín-Martínez… - … on Electron Devices, 2021 - ieeexplore.ieee.org
This article presents a new methodology to extract, at a given operation condition, the
statistical distribution of the number of active defects that contribute to the observed device …
statistical distribution of the number of active defects that contribute to the observed device …
NBTI-generated defects in nanoscaled devices: Fast characterization methodology and modeling
Negative bias temperature instability (NBTI)-generated defects (GDs) have been widely
observed and known to play an important role in device's lifetime. However, its …
observed and known to play an important role in device's lifetime. However, its …
Key issues and solutions for characterizing hot carrier aging of nanometer scale nMOSFETs
Silicon bandgap limits the reduction of operation voltage when downscaling device sizes.
This increases the electrical field within-a-device and hot carrier aging (HCA) is becoming …
This increases the electrical field within-a-device and hot carrier aging (HCA) is becoming …
On the recoverable and permanent components of NBTI in p-channel power VDMOSFETs
D Danković, I Manić, V Davidović… - … on Device and …, 2016 - ieeexplore.ieee.org
This paper introduces a new experimental approach allowing to investigate the recoverable
and permanent components in commercial p-channel power VDMOSFETs subjected to …
and permanent components in commercial p-channel power VDMOSFETs subjected to …
Development of a technique for characterizing bias temperature instability-induced device-to-device variation at SRAM-relevant conditions
SRAM is vulnerable to device-to-device variation (DDV), since it uses minimum-sized
devices and requires device matching. In addition to the as-fabricated DDV at time-zero …
devices and requires device matching. In addition to the as-fabricated DDV at time-zero …
Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI pMOSFETs With Al2O3/GeOx Gate Stacks
Y Sun, W Schwarzenbach, S Yuan… - IEEE Journal of the …, 2023 - ieeexplore.ieee.org
The impact of channel thickness on the negative-bias temperature instability (NBTI)
behaviors has been studied for the Germanium-on-Insulator (Ge-OI) pMOSFETs. It is found …
behaviors has been studied for the Germanium-on-Insulator (Ge-OI) pMOSFETs. It is found …
Key issues and techniques for characterizing time-dependent device-to-device variation of SRAM
Discreteness of aging-induced charges causes a Time-dependent Device-to-Device
Variation (TDDV) and SRAM is vulnerable to it. This work analyses the shortcomings of …
Variation (TDDV) and SRAM is vulnerable to it. This work analyses the shortcomings of …
Trigger-When-Charged: A Technique for Directly Measuring RTN and BTI-Induced Threshold Voltage Fluctuation Under Use-
Low-power circuits are important for many applications, such as Internet of Things. Device
variations and fluctuations are challenging their design. Random telegraph noise (RTN) is …
variations and fluctuations are challenging their design. Random telegraph noise (RTN) is …