Pt nanoclusters on GaN nanowires for solar-asssisted seawater hydrogen evolution
Seawater electrolysis provides a viable method to produce clean hydrogen fuel. To date,
however, the realization of high performance photocathodes for seawater hydrogen …
however, the realization of high performance photocathodes for seawater hydrogen …
Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials
Progress in the design and fabrication of ultraviolet and deep-ultraviolet group III–nitride
optoelectronic devices, based on aluminum gallium nitride and boron nitride and their …
optoelectronic devices, based on aluminum gallium nitride and boron nitride and their …
Angular dependent XPS study of surface band bending on Ga-polar n-GaN
R Huang, T Liu, Y Zhao, Y Zhu, Z Huang, F Li… - Applied Surface …, 2018 - Elsevier
Surface band bending and composition of Ga-polar n-GaN with different surface treatments
were characterized by using angular dependent X-ray photoelectron spectroscopy. Upward …
were characterized by using angular dependent X-ray photoelectron spectroscopy. Upward …
Oxidative Dehydrogenation of Propane to Propylene in the Presence of CO2 over Gallium Nitride Supported on NaZSM-5
ZY Wang, ZH He, Y Xia, L Zhang, K Wang… - Industrial & …, 2021 - ACS Publications
Dehydrogenation of propane in the presence of CO2 (CO2-ODHP) is an important route for
the synthesis of propylene and utilization of the waste CO2. In the present work, diverse GaN …
the synthesis of propylene and utilization of the waste CO2. In the present work, diverse GaN …
Photoelectrochemical water-splitting using GaN pyramidal dots and their long-term stability in the two-electrode configuration
We report the high solar-to-hydrogen conversion efficiency (STH) and long-term stability of a
photoelectrochemical water-splitting (PEC-WS) system using GaN pyramidal dots (PDs) …
photoelectrochemical water-splitting (PEC-WS) system using GaN pyramidal dots (PDs) …
Bandgap tunable Al1-xInxN films for ultraviolet–visible photodetectors with wide spectral response
J Chen, L Shen, D Qi, L Wu, X Li, J Song, X Zhang - Ceramics International, 2022 - Elsevier
Al 1-x In x N films allow the bandgap to be adjusted in a wide range, which is fascinating for
optoelectronic applications, especially in ultraviolet–visible and wavelength-selective …
optoelectronic applications, especially in ultraviolet–visible and wavelength-selective …
Significant effect of thin oxide layer on characteristics of p-InGaN/GaN nonalloyed ohmic contacts
F Zhang, R Wang, F Li, A Tian, J Liu… - Journal of Applied …, 2023 - pubs.aip.org
In an interconnected high-vacuum illustration system, the surfaces of p-InGaN/GaN
heterostructures grown with integrated metalorganic chemical vapor deposition were treated …
heterostructures grown with integrated metalorganic chemical vapor deposition were treated …
Role of the MnCoGe alloys to enhance the capacitance of flexible supercapacitors made with electrodes of recycled aluminum and carbon nanotubes
R Mendoza, M Balderas-Soto, RG Suarez, J Zamora… - Synthetic Metals, 2024 - Elsevier
Flexible and sustainable supercapacitors (SCs) were fabricated with carbon nanotubes
(CNTs) as the anode and recycled aluminium as the cathode (obtained from soda cans) …
(CNTs) as the anode and recycled aluminium as the cathode (obtained from soda cans) …
[HTML][HTML] Silicon nitride shadowed selective area growth of low defect density vertical GaN mesas via plasma-assisted molecular beam epitaxy
MM Landi, FP Kelly, RE Vesto, K Kim - APL Materials, 2024 - pubs.aip.org
Ion bombardment during inductively coupled plasma reactive-ion etching and ion-
implantation introduces irreparable crystalline damage to gallium nitride (GaN) power …
implantation introduces irreparable crystalline damage to gallium nitride (GaN) power …
Structural, electrical, morphological, and interfacial characteristics of lattice-matched InAlN/GaN HEMT structure on SiC substrate
This work highlights the influence of surface properties, on the characteristics of InAlN/GaN
based high electron mobility transistor (HEMT) structures grown on the SiC substrate by …
based high electron mobility transistor (HEMT) structures grown on the SiC substrate by …