With the advent of portable devices, the demand for static random-access memory (SRAM)
is increasing with large use of SRAM in System on Chip and high-performance VLSI circuits …

In this paper, we present an artificial neural network (ANN)-based compact model to
evaluate the characteristics of a nanosheet field-effect transistor (NSFET), which has been …

Graphene nanoribbons (GNRs) are a good replacement material for silicon to overcome
short-channel effects in nanoscale devices. However, with continuous technology scaling …

All battery-operated devices require primary memory that responds fast. By virtue of its high
speed and performance, Static RAM is commonly used as cache memory and main memory …

With aggressive scaling of device feature size, performance of conventional MOS SRAM is
affected and reliability, leakage power dissipation, and testing related issues arise due to …

The scaling process of the conventional 2D‐planar metal‐oxide semiconductor field‐effect
transistor (MOSFET) is now approaching its limit as technology has reached below 20 nm …

In the last few years, the tiny size of MOSFET (ie, less than tens of nano-meters) created
some operational problems such as increased gate-oxide leakage, amplified junction …

Purpose Major area of a die is consumed in memory components. Almost 60-70% of chip
area is being consumed by “Memory Circuits”. The dominant memory in this market is …

Abstract Static Random-Access Memory cells with ultralow leakage and superior stability are
the primary choice of embedded memories in contemporary smart devices. This paper …

Static random-access memory (SRAM) is in great demand due to the development of
portable electronics and its growing popularity in system-on-chip and advanced very-large …