Investigations of impurity-free vacancy disordering in (Al) InGaAs (P)/InGaAs quantum wells
In this work, controlled band gap modifications in InGaAsP/InGaAs and AlInGaAs/InGaAs
quantum well structures using different encapsulating layers are studied and compared …
quantum well structures using different encapsulating layers are studied and compared …
Influence of SiO2 and TiO2 dielectric layers on the atomic intermixing of InxGa1− xAs/InP quantum well structures
We have studied the influence of SiO 2 and TiO 2 dielectric layers on the atomic intermixing
of In x Ga 1− x As/InP quantum well structures using the impurity-free vacancy disordering …
of In x Ga 1− x As/InP quantum well structures using the impurity-free vacancy disordering …
Investigation of ion implantation induced intermixing in InP based quaternary quantum wells
In this work, proton and arsenic ion implantation induced intermixing in AlInGaAs/InGaAs
quantum wells (QWs) has been studied and compared with InGaAsP/InGaAs QWs. The …
quantum wells (QWs) has been studied and compared with InGaAsP/InGaAs QWs. The …
Comparison of quantum well interdiffusion on group III, group V, and combined groups III and V sublattices in GaAs-based structures
O Hulko, DA Thompson… - IEEE Journal of Selected …, 2008 - ieeexplore.ieee.org
An analytical electron microscope was used for direct measurement of the concentration
profiles of In 1-x Ga x As y P 1-y quantum wells (QWs) and barriers grown by molecular …
profiles of In 1-x Ga x As y P 1-y quantum wells (QWs) and barriers grown by molecular …
Swift heavy-ion modification of semiconductor heterostructures
Ion-beam modification of material properties is of great interest from a research and
industrial application point of view. In particular, modifications and characterizations of …
industrial application point of view. In particular, modifications and characterizations of …
Determination of diffusion lengths for intermixed quaternary quantum well with polarized edge-emitting photoluminescence
CD Xu, T Mei, JR Dong - Applied physics letters, 2007 - pubs.aip.org
Diffusion lengths of the group III and V sublattices are quantitatively determined for
intermixing of a quaternary In Ga As∕ In P quantum well using polarized edge-emitting …
intermixing of a quaternary In Ga As∕ In P quantum well using polarized edge-emitting …
Inductively coupled argon plasma-enhanced quantum-well intermixing: cap layer effect and plasma process influence
C Xu, T Mei - IEEE journal of quantum electronics, 2009 - ieeexplore.ieee.org
Comprehensive investigation on inductively coupled argon plasma-enhanced quantum-well
intermixing is done on an InGaAs-InP quantum-well structure with p-/n-doped InP and …
intermixing is done on an InGaAs-InP quantum-well structure with p-/n-doped InP and …
Study of intermixing mechanism in AlInGaAs/InGaAs quantum well
In this work, controlled band gap modifications in AlInGaAs/InGaAs quantum well structures
using different encapsulating layers are studied and compared. X-ray photoelectron …
using different encapsulating layers are studied and compared. X-ray photoelectron …
Effect of interdiffusion on the band structure and absorption coefficient of a one-dimensional semiconductor superlattice
VL Aziz Aghchegala - … of Contemporary Physics (Armenian Academy of …, 2011 - Springer
The effect of interdiffusion of Al and Ga atoms on the confining potential, band structure and
absorption coefficient of electromagnetic radiation of a one-dimensional superlattice …
absorption coefficient of electromagnetic radiation of a one-dimensional superlattice …
Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and InAlGaAs/InGaAs/InP quantum wells
In this work, we studied the proton and arsenic ion implantation-induced intermixing in
InGaAsP/InGaAs and InAlGaAs/InGaAs quantum wells. The results were compared and …
InGaAsP/InGaAs and InAlGaAs/InGaAs quantum wells. The results were compared and …