Ultrathin (< 4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
The outstanding properties of SiO 2, which include high resistivity, excellent dielectric
strength, a large band gap, a high melting point, and a native, low defect density interface …
strength, a large band gap, a high melting point, and a native, low defect density interface …
Dielectric breakdown of oxide films in electronic devices
Dielectric breakdown is a sudden and catastrophic increase in the conductivity of an
insulator caused by electrical stress. It is one of the major reliability issues in electronic …
insulator caused by electrical stress. It is one of the major reliability issues in electronic …
Modeling and characterization of gate oxide reliability
JC Lee, C Ih-Chin, H Chenming - IEEE Transactions on …, 1988 - ieeexplore.ieee.org
A technique of predicting the lifetime of an oxide to different voltages, different oxide areas,
and different temperatures is presented. Using the defect density model in which defects are …
and different temperatures is presented. Using the defect density model in which defects are …
High-field-induced degradation in ultra-thin SiO/sub 2/films
Very thin thermal oxides are shown to exhibit a failure mode that is undetected by
conventional breakdown tests. This failure mode appears in the form of excessive leakage …
conventional breakdown tests. This failure mode appears in the form of excessive leakage …
Projecting gate oxide reliability and optimizing reliability screens
R Moazzami, C Hu - IEEE Transactions on Electron Devices, 1990 - ieeexplore.ieee.org
The effect of time-dependent stress voltage and temperature on the reliability of thin SiO/sub
2/films is incorporated in a quantitative defect-induced breakdown model. Based on this …
2/films is incorporated in a quantitative defect-induced breakdown model. Based on this …
Towards a universal model of dielectric breakdown
We present a microscopic breakdown (BD) model in which chemical bonds are weakened
by carrier injection and trapping into pre-existing structural defects (precursors) and by the …
by carrier injection and trapping into pre-existing structural defects (precursors) and by the …
[图书][B] Oxide reliability: a summary of silicon oxide wearout, breakdown, and reliability
DJ Dumin - 2002 - books.google.com
This book presents in summary the state of our knowledge of oxide reliability. The articles
have been written by experts who are among the most knowledgeable in the field. The book …
have been written by experts who are among the most knowledgeable in the field. The book …
Determination of carrier polarity in Fowler–Nordheim tunneling and evidence of fermi level pinning at the hexagonal boron nitride/metal interface
Hexagonal boron nitride (h-BN) is an important insulating substrate for two-dimensional (2D)
heterostructure devices and possesses high dielectric strength comparable to SiO2. Here …
heterostructure devices and possesses high dielectric strength comparable to SiO2. Here …
[HTML][HTML] Atomic-scale defects generated in the early/intermediate stages of dielectric breakdown in Si/SiO2 transistors
Electrically detected magnetic resonance and near-zero-field magnetoresistance
measurements were used to study atomic-scale traps generated during high-field gate …
measurements were used to study atomic-scale traps generated during high-field gate …
Silicon dioxide breakdown lifetime enhancement under bipolar bias conditions
E Rosenbaum, Z Liu, C Hu - IEEE Transactions on Electron …, 1993 - ieeexplore.ieee.org
The authors point out that time to breakdown (t/sub BD/) of silicon dioxide has a pronounced
frequency dependence when it is measured under bipolar bias conditions. At high …
frequency dependence when it is measured under bipolar bias conditions. At high …