This article comprehensively reviews the growth of III–V antimony-based semiconductor
materials using metal-organic chemical vapor deposition (MOCVD). It does this by first …

High-quality ZnO films are receiving increased interest for use in low-loss high-frequency
surface acoustic wave (SAW) devices, acousto-optic and optical modulators, as buffer layers …

High temperature gas phase reactions between trimethylgallium (TMG) and ammonia were
studied by means of in situ mass spectroscopy in an isothermal flow tube reactor. The …

Highly c-axis oriented zinc oxide (ZnO) thin films with a wurtzite structure have been grown
on glass substrates by metal organic chemical vapor deposition. The influence of growth …

Transparent conductive aluminum-doped zinc oxide (AZO) films were prepared by an
ultrasonic spray pyrolysis method. A vertical type hot wall furnace was used as a reactor in …

Thin films of aluminum nitride and oxynitride were deposited by atomic layer deposition
(ALD) in the temperature range from 170 to 290° C (optimal deposition temperature 200 …

The II–VI compound semiconductor ZnO is already widely used for various applications such
as UV resistive coatings, gas sensors and surface acoustic wave devices. Recently, the …

Zinc oxide (ZnO) films were prepared by ultrasonic spray pyrolysis on indium (In) films
deposited by evaporation and subsequently subjected to rapid thermal annealing (RTA) in …

ZnO layers have been grown by metal‐organic chemical vapor deposition using diethylzinc
and iso‐propanol. Heteroepitaxial growth on c‐plane sapphire and GaN templates as well …

There has been increased interest in high quality ZnO films for use in a diverse range of
applications such as in high frequency surface acoustic wave filters, buffer layers for GaN …