Accelerated molecular dynamics methods: introduction and recent developments
Because of its unrivaled predictive power, the molecular dynamics (MD) method is widely
used in theoretical chemistry, physics, biology, materials science, and engineering …
used in theoretical chemistry, physics, biology, materials science, and engineering …
A review of enhanced sampling approaches for accelerated molecular dynamics
P Tiwary, A van de Walle - Multiscale materials modeling for …, 2016 - Springer
Molecular dynamics (MD) simulations have become a tool of immense use and popularity
for simulating a variety of systems. With the advent of massively parallel computer resources …
for simulating a variety of systems. With the advent of massively parallel computer resources …
Radiation damage in silicon exposed to high-energy protons
G Davies, S Hayama, L Murin, R Krause-Rehberg… - Physical Review B …, 2006 - APS
Photoluminescence, infrared absorption, positron annihilation, and deep-level transient
spectroscopy (DLTS) have been used to investigate the radiation damage produced by 24 …
spectroscopy (DLTS) have been used to investigate the radiation damage produced by 24 …
The modern temperature-accelerated dynamics approach
Accelerated molecular dynamics (AMD) is a class of MD-based methods used to simulate
atomistic systems in which the metastable state-to-state evolution is slow compared with …
atomistic systems in which the metastable state-to-state evolution is slow compared with …
[图书][B] Silicon, germanium, and their alloys: growth, defects, impurities, and nanocrystals
G Kissinger, S Pizzini - 2014 - books.google.com
Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …
materials still demand research, eminently in view of the improvement of knowledge on …
Density-functional study of small interstitial clusters in Si: Comparison with experiments
Local density functional calculations are carried out on models of tri-and tetra-self-interstitial
clusters in Si. Electrical levels and local vibrational modes (LVMs) of the defects are found …
clusters in Si. Electrical levels and local vibrational modes (LVMs) of the defects are found …
Role of configurational entropy in the thermodynamics of clusters of point defects in crystalline solids
SS Kapur, M Prasad, JC Crocker, T Sinno - Physical Review B—Condensed …, 2005 - APS
The internal configurational entropy of point defect clusters in crystalline silicon is studied in
detail by analyzing their potential energy landscapes. Both on-lattice and off-lattice …
detail by analyzing their potential energy landscapes. Both on-lattice and off-lattice …
Front-end process modeling in silicon
Front-end processing mostly deals with technologies associated to junction formation in
semiconductor devices. Ion implantation and thermal anneal models are key to predict …
semiconductor devices. Ion implantation and thermal anneal models are key to predict …
Tight-binding molecular dynamics: a primer
L Colombo - La Rivista del Nuovo Cimento, 2005 - Springer
Following the seminal paper by Slater and Koster (1954) the tight-binding model has been
widely and successfully applied to investigate electronic properties of materials over several …
widely and successfully applied to investigate electronic properties of materials over several …
Current challenges in atomistic simulations of glasses for biomedical applications
A Tilocca - Physical Chemistry Chemical Physics, 2014 - pubs.rsc.org
Atomic-scale computer simulations have emerged as a powerful tool to probe at a very high
resolution the structural and dynamical properties of amorphous and crystalline biomaterials …
resolution the structural and dynamical properties of amorphous and crystalline biomaterials …