Ferroelectric field effect transistors (FeFETs): advancements, challenges and exciting prospects for next generation non-volatile memory (NVM) applications
Data intensive applications such as AI (Artificial Intelligence) and IoT (Internet of Things)
demand high performance and highly reliable non-volatile memories (NVM). FeFET offers …
demand high performance and highly reliable non-volatile memories (NVM). FeFET offers …
Effect of channel thickness on performance of ultra-thin body IGZO field-effect transistors
MJ Kim, HJ Park, S Yoo, MH Cho… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Amorphous indium–gallium–zinc oxide (a-IGZO) is a promising channel material for an
upper transistor in monolithic three-dimensional devices. Although the field-effect transistors …
upper transistor in monolithic three-dimensional devices. Although the field-effect transistors …
Highly scaled InGaZnO ferroelectric field-effect transistors and ternary content-addressable memory
We demonstrate nonvolatile and area-efficient ternary content-addressable memories
(TCAMs) featuring amorphous indium–gallium–zinc–oxide (a-IGZO) ferroelectric field-effect …
(TCAMs) featuring amorphous indium–gallium–zinc–oxide (a-IGZO) ferroelectric field-effect …
High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics
Q Li, S Wang, Z Li, X Hu, Y Liu, J Yu, Y Yang… - Nature …, 2024 - nature.com
With the development of wearable devices and hafnium-based ferroelectrics (FE), there is
an increasing demand for high-performance flexible ferroelectric memories. However …
an increasing demand for high-performance flexible ferroelectric memories. However …
High performance, amorphous InGaZnO thin-film transistors with ferroelectric ZrO2 gate insulator by one step annealing
Ferroelectric thin film transistors (FE-TFTs) are of increasing interest for next generation
memory applications. Post fabrication annealing plays a crucial role to induce ferroelectricity …
memory applications. Post fabrication annealing plays a crucial role to induce ferroelectricity …
Improvement of Amorphous InGaZnO Thin-Film Transistor With Ferroelectric ZrOx/HfZrO Gate Insulator by 2 Step Sequential Ar/O2 Treatment
We report the improvement of ferroelectric (FE) amorphous InGaZnO 4 (a-IGZO) thin film
transistors (TFT) by Ar/O 2 plasma treatment and subsequent thermal annealing. The a-IGZO …
transistors (TFT) by Ar/O 2 plasma treatment and subsequent thermal annealing. The a-IGZO …
Oxygen Scavenging in HfZrOx‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement
The authors demonstrate improved switching voltage, retention, and endurance properties
in HfZrOx (HZO)‐based n/p‐ferroelectric field‐effect transistors (FeFETs) via oxygen …
in HfZrOx (HZO)‐based n/p‐ferroelectric field‐effect transistors (FeFETs) via oxygen …
Effects of oxygen vacancies on ferroelectric characteristics of RF-sputtered Hf0. 5Zr0. 5O2
Ferroelectric memories composed of all-sputtered films were fabricated, and the ferroelectric
properties of the sputtered Hf 0.5 Zr 0.5 O 2 (HZO) were analyzed by modulating the amount …
properties of the sputtered Hf 0.5 Zr 0.5 O 2 (HZO) were analyzed by modulating the amount …
Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics
The study demonstrates HfZrOx (HZO)‐based Si ferroelectric field‐effect transistors
(FeFETs) with a low operating voltage (1.5 V) and immediate read‐after‐write operation …
(FeFETs) with a low operating voltage (1.5 V) and immediate read‐after‐write operation …
A surface potential based compact model for ferroelectric a-InGaZnO-TFTs toward temperature dependent device characterization
An a-IGZO based ferroelectric-TFT (FeTFT) is promising in future BEOL-compatible
architecture designs. Despite its excellent nonvolatility, a complicated coupling of intrinsic …
architecture designs. Despite its excellent nonvolatility, a complicated coupling of intrinsic …