US8158515B2 - Method of making 3D integrated circuits - Google Patents US8158515B2 -
Method of making 3D integrated circuits - Google Patents Method of making 3D integrated …

(57) ABSTRACT A method of making a bonded intermediate substrate includes forming a
Weak interface in a GaN source substrate by implanting ions into an N-terminated surface of …

(Continued) second Substrates. The method may also include bonding a plurality of
semiconductor devices to an element, and the element may have recesses in which the …

An intermediate substrate includes a handle substrate bonded to a thin layer suitable for
epitaxial growth of a compound semiconductor layer, such as a III-nitride semiconductor …

3,888,708 A 6, 1975 Wise et al. 5,877,516 A 3/1999 Mermagen et al. 4.416, 054 A 11, 1983
Thomas et al. 5,880,010 A 3, 1999 Davidson 4,500,905 A 2/1985 Shibata …

(57) ABSTRACT A method includes growing a first epitaxial layer of III-nitride material,
forming a damaged region by implanting ions into an exposed Surface of the first epitaxial …

US6902987B1 - Method for low temperature bonding and bonded structure - Google
Patents US6902987B1 - Method for low temperature bonding and bonded structure …

Related US Application Data No. 127954, 740, filed on Nov. 26, 2010, now Pat. No.
8,153,505, which is a continuation of application No. 12/720,368, filed on Mar. 9, 2010, now …

The present invention provides a method of forming a through-Substrate interconnect for a
circuit element in a microelectronics device. The device is formed on a Substrate having a …

Int. C. HOIL 2L/20(2006.01) HOIL 2L/683(2006.01) HOIL 2L/768(2006.01) HOIL
2/822(2006.01) HOIL 23/13(2006.01) HOIL 23/36(2006.01) HOIL 23/248(2006.01) HOIL …