Computational investigation of negative capacitance coaxially gated carbon nanotube field-effect transistors
K Tamersit, MKQ Jooq… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
In this article, we present a computational investigation on nanoscale coaxial-gate
negativecapacitance carbon nanotube field-effect transistor (NC CNTFET). The proposed …
negativecapacitance carbon nanotube field-effect transistor (NC CNTFET). The proposed …
Performance enhancement of an ultra-scaled double-gate graphene nanoribbon tunnel field-effect transistor using channel doping engineering: Quantum simulation …
K Tamersit - AEU-International Journal of Electronics and …, 2020 - Elsevier
In this paper, new graphene nanoribbon tunnel field-effect transistors (GNRTFETs) endowed
with specific doping profiles are proposed, assessed, and compared with the conventional …
with specific doping profiles are proposed, assessed, and compared with the conventional …
Nanotube–antibody biosensor arrays for the detection of circulating breast cancer cells
N Shao, E Wickstrom, B Panchapakesan - Nanotechnology, 2008 - iopscience.iop.org
Recent reports have shown that nanoscale electronic devices can be used to detect a
change in electrical properties when receptor proteins bind to their corresponding …
change in electrical properties when receptor proteins bind to their corresponding …
Improving the performance of a junctionless carbon nanotube field-effect transistor using a split-gate
K Tamersit - AEU-International Journal of Electronics and …, 2020 - Elsevier
In this paper, a novel junctionless carbon nanotube field-effect transistor (JL-CNTFET)
endowed with a split coaxial gate (SCG) is proposed through a rigorous self-consistent …
endowed with a split coaxial gate (SCG) is proposed through a rigorous self-consistent …
Effect of carbon nanotube network morphology on thin film transistor performance
The properties of electronic devices based on carbon nanotube networks (CNTNs) depend
on the carbon nanotube (CNT) deposition method used, which can yield a range of network …
on the carbon nanotube (CNT) deposition method used, which can yield a range of network …
Numerical study of lightly doped drain and source carbon nanotube field effect transistors
R Yousefi, K Saghafi… - IEEE transactions on …, 2010 - ieeexplore.ieee.org
In this paper, we investigate the transport properties of carbon nanotube field-effect
transistors (CNTFETs), with a nonequilibrium Green's function (NEGF) method. Tunneling …
transistors (CNTFETs), with a nonequilibrium Green's function (NEGF) method. Tunneling …
A computational study of a carbon nanotube junctionless tunneling field-effect transistor (CNT-JLTFET) based on the charge plasma concept
SH Tahaei, SS Ghoreishi, R Yousefi… - Superlattices and …, 2019 - Elsevier
In this work, a carbon nanotube junctionless tunnel field-effect transistor has been proposed
and investigated. The presented structure uses two isolated gates with the same work …
and investigated. The presented structure uses two isolated gates with the same work …
Quantum simulation of a junctionless carbon nanotube field-effect transistor with binary metal alloy gate electrode
K Tamersit - Superlattices and Microstructures, 2019 - Elsevier
In this paper, a quantum simulation study that highlights the role of linearly graded binary
metal alloy (LGBMA) gate in improving the performance of coaxially gated junctionless …
metal alloy (LGBMA) gate in improving the performance of coaxially gated junctionless …
Effect of uniaxial strain on electrical properties of CNT-based junctionless field-effect transistor: Numerical study
P Pourian, R Yousefi, SS Ghoreishi - Superlattices and Microstructures, 2016 - Elsevier
Numerical studies on junctionless carbon nanotube field-effect transistors (JL-CNTFETs)
have indicated that these devices produce more ON current than silicon junctionless …
have indicated that these devices produce more ON current than silicon junctionless …
Uniaxial strain effects on the performance of a ballistic top gate graphene nanoribbon on insulator transistor
K Alam - IEEE transactions on nanotechnology, 2009 - ieeexplore.ieee.org
The effects of uniaxial strain on the bandgap and performance of a top gate graphene
nanoribbon (GNR) on insulator transistor are studied using pi-orbital basis 3-D ballistic …
nanoribbon (GNR) on insulator transistor are studied using pi-orbital basis 3-D ballistic …