Advancement and challenges of biosensing using field effect transistors

G Thriveni, K Ghosh - Biosensors, 2022 - mdpi.com
Field-effect transistors (FETs) have become eminent electronic devices for biosensing
applications owing to their high sensitivity, faster response and availability of advanced …

Recent progress on sensitivity analysis of schottky field effect transistor based biosensors

P Kumar, P Esakki, L Agarwal, PeddaKrishna, S Kale… - Silicon, 2023 - Springer
In this review, we explored the modern development of schottky field effect transistor (SK
FET) structures and the improvement of sensitivity of nanowire sensors using dielectric …

A comparative analysis of cavity positions in charge plasma based tunnel FET for biosensor application

A Kumar, S Kale - IETE Journal of Research, 2024 - Taylor & Francis
This work reports a comparative analysis of different cavity positions in Charge Plasma-
based Tunnel Field Effect Transistor (CP TFET) for Biosensor Application. In CP TFET, we …

Analytical modelling and sensitivity analysis of Gallium Nitride-Gate Material and, dielectric engineered-Schottky nano-wire fet (GaN-GME-DE-SNW-fet) based label …

S Sharma, V Nath, SS Deswal, RS Gupta - Microelectronics Journal, 2022 - Elsevier
An analytical model of nanogap embedded Gallium Nitride Gate-Material and Dielectric
Engineered-Schottky Nano-Wire Field Effect Transistor (GaN-GME-DE-SNW-FET) for …

TFET Biosensor simulation and analysis for various biomolecules

P Vimala, LL Krishna, SS Sharma - Silicon, 2022 - Springer
This paper investigates the simulation and performance of Tunnel field effect transistor
(TFET) with a nanocavity in it, which can be used for bio sensing application. The entire …

Dielectrically modulated III-V compound semiconductor based pocket doped tunnel FET for label free biosensing applications

S Rashid, F Bashir, FA Khanday… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
In this paper, a novel structure of double gate tunnel FET has been proposed and simulated
for biosensing applications. The device uses III-V compound semiconductors and an n+ …

Noise and sensitivity analysis of the dielectric modulated reconfigurable SiNW-SBT for biosensor applications

A Kumar, S Kale - Micro and Nanostructures, 2024 - Elsevier
For the first time, we reported the noise and sensitivity analysis of the Dielectric Modulated
Reconfigurable Silicon Nanowire-based Schottky Barrier Transistor (DMR SiNW-SBT) for …

Spacer-engineered reconfigurable silicon nanowire schottky barrier transistor as a label-free biosensor

A Kumar, S Kale - Silicon, 2024 - Springer
In this paper, for the first time, we have investigated a Spacer-Engineered Reconfigurable
Silicon Nanowire Schottky Barrier Transistor (SE R-Si NW SBT) as a label-free Biosensor …

Double gate 6h-silicon carbide schottky barrier fet as dielectrically modulated label free biosensor

S Rashid, F Bashir, FA Khanday, MR Beigh - Silicon, 2023 - Springer
This article presents a novel structure for efficient label free biosensing applications. The
proposed device comprises of 6H-Silicon Carbide based double gate Schottky Barrier FET …

L-shaped high performance Schottky barrier FET as dielectrically modulated label free biosensor

S Rashid, F Bashir, FA Khanday… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
In this work, we demonstrate the realization of L-Shaped Schottky Barrier FET as a
biosensing device with improved sensitivity. The proposed device uses dual material gate …