[HTML][HTML] GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
GaN-on-Si vertical Schottky and pn diodes
This letter demonstrates GaN vertical Schottky and pn diodes on Si substrates for the first
time. With a total GaN drift layer of only 1.5-thick, a breakdown voltage (BV) of 205 V was …
time. With a total GaN drift layer of only 1.5-thick, a breakdown voltage (BV) of 205 V was …
Origin and control of OFF-state leakage current in GaN-on-Si vertical diodes
Conventional GaN vertical devices, though promising for high-power applications, need
expensive GaN substrates. Recently, low-cost GaN-on-Si vertical diodes have been …
expensive GaN substrates. Recently, low-cost GaN-on-Si vertical diodes have been …
1300 V normally-OFF p-GaN gate HEMTs on Si with high ON-state drain current
H Jiang, Q Lyu, R Zhu, P Xiang… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
In this article, we demonstrate normally-OFF p-GaN gate high electron mobility transistors
(HEMTs) on Si with an ultrahigh breakdown voltage () and excellent saturation drain current …
(HEMTs) on Si with an ultrahigh breakdown voltage () and excellent saturation drain current …
Highly Rectifying Water-Mediated Hydrogen Bond-Coupled Organic–Inorganic Interfaces
F Hossein-Babaei, A Karimpour - ACS Applied Materials & …, 2023 - ACS Publications
Asymmetrically conducting interfaces are the building blocks of electronic devices. While p–
n junction diodes made of seminal inorganic semiconductors with rectification ratios close to …
n junction diodes made of seminal inorganic semiconductors with rectification ratios close to …
Interfacial band parameters of ultrathin ALD–Al2O3, ALD–HfO2, and PEALD–AlN/ALD–Al2O3 on c-plane, Ga-face GaN through XPS measurements
Ultrathin oxides (UOs) and ultrathin nitrides (UNs) play a crucial role in forming lattice-
mismatched semiconductor heterostructures that are fabricated by using semiconducting …
mismatched semiconductor heterostructures that are fabricated by using semiconducting …
Controlling nanomagnet magnetization dynamics via magnetoelastic coupling
Y Yahagi, B Harteneck, S Cabrini, H Schmidt - Physical Review B, 2014 - APS
We demonstrate that elastic interactions between nanomagnets in a periodic array can
determine the magnetic response according to the nanoscale array geometry. These …
determine the magnetic response according to the nanoscale array geometry. These …
Emerging advances and future prospects of two dimensional nanomaterials based solar cells
The rapid advancement of two-dimensional (2D) nanomaterials in solar energy conversion
has sparked considerable interest due to their unparalleled structural and optoelectronic …
has sparked considerable interest due to their unparalleled structural and optoelectronic …
Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors
S Latrach, E Frayssinet, N Defrance, S Chenot… - Current Applied …, 2017 - Elsevier
The paper deals with trap effects in InAlN/AlN/GaN and AlGaN/AlN/GaN high electron
mobility transistor structures using frequency dependent conductance and High-Low …
mobility transistor structures using frequency dependent conductance and High-Low …
Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates
A Pérez-Tomás, A Fontserè, J Llobet… - Journal of Applied …, 2013 - pubs.aip.org
The vertical bulk (drain-bulk) current (I db) properties of analogous AlGaN/GaN hetero-
structures molecular beam epitaxially grown on silicon, sapphire, and free-standing GaN (FS …
structures molecular beam epitaxially grown on silicon, sapphire, and free-standing GaN (FS …