III-nitride nanostructures: Emerging applications for Micro-LEDs, ultraviolet photonics, quantum optoelectronics, and artificial photosynthesis
In this review article, we discuss the molecular beam epitaxy and basic structural, electronic,
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …
A Decade of Nonpolar and Semipolar III‐Nitrides: A Review of Successes and Challenges
The performance of III‐nitride devices is degraded by polarization in a wurtzite crystal
structure. Nonpolar and semipolar III‐nitrides have been extensively studied since the early …
structure. Nonpolar and semipolar III‐nitrides have been extensively studied since the early …
Room temperature electrically injected polariton laser
Room temperature electrically pumped inversionless polariton lasing is observed from a
bulk GaN-based microcavity diode. The low nonlinear threshold for polariton lasing occurs …
bulk GaN-based microcavity diode. The low nonlinear threshold for polariton lasing occurs …
Mesoporous GaN for Photonic Engineering Highly Reflective GaN Mirrors as an Example
A porous medium is a special type of material where voids are created in a solid medium.
The introduction of pores into a bulk solid can profoundly affect its physical properties and …
The introduction of pores into a bulk solid can profoundly affect its physical properties and …
An electrically pumped surface-emitting semiconductor green laser
Surface-emitting semiconductor lasers have been widely used in data communications,
sensing, and recently in Face ID and augmented reality glasses. Here, we report the first …
sensing, and recently in Face ID and augmented reality glasses. Here, we report the first …
[HTML][HTML] Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact
We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel
junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to …
junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to …
Three-dimensional quantum confinement of charge carriers in self-organized AlGaN nanowires: A viable route to electrically injected deep ultraviolet lasers
We report on the molecular beam epitaxial growth and structural characterization of self-
organized AlGaN nanowire arrays on Si substrate with high luminescence efficiency …
organized AlGaN nanowire arrays on Si substrate with high luminescence efficiency …
Green vertical-cavity surface-emitting lasers based on InGaN quantum dots and short cavity
T Yang, YH Chen, YC Wang, W Ou, LY Ying, Y Mei… - Nano-Micro Letters, 2023 - Springer
Room temperature low threshold lasing of green GaN-based vertical cavity surface emitting
laser (VCSEL) was demonstrated under continuous wave (CW) operation. By using self …
laser (VCSEL) was demonstrated under continuous wave (CW) operation. By using self …
Recent progress on micro-LEDs
With the advent of technologies such as augmented/virtual reality (AR/VR) that are moving
towards displays with high efficiency, small size, and ultrahigh resolution, the development …
towards displays with high efficiency, small size, and ultrahigh resolution, the development …
Distributed Bragg reflectors for GaN-based vertical-cavity surface-emitting lasers
Featured Application GaN based vertical-cavity surface-emitting lasers. Abstract A
distributed Bragg reflector (DBR) is a key building block in the formation of semiconductor …
distributed Bragg reflector (DBR) is a key building block in the formation of semiconductor …