3D sequential integration opportunities and technology optimization
P Batude, B Sklenard… - IEEE International …, 2014 - ieeexplore.ieee.org
Compared with TSV-based 3D ICs, monolithic or sequential 3D ICs presents “true” benefits
of going to the vertical dimension as the stacked layers can be connected at the transistor …
of going to the vertical dimension as the stacked layers can be connected at the transistor …
Low temperature junction formation by solid phase epitaxy on thin film devices: Atomistic modeling and experimental achievements
B Sklenard, P Batude, L Pasini… - 2014 International …, 2014 - ieeexplore.ieee.org
In this paper, we address the problem of junction formation with a low temperature
processing (≤ 600° C) through Solid Phase Epitaxial Regrowth. We present the main …
processing (≤ 600° C) through Solid Phase Epitaxial Regrowth. We present the main …
Physical modeling of junction processing in FDSOI devices for 20 nm node and below
B Sklénard - 2014 - theses.hal.science
Complementary metal oxide semiconductor (CMOS) device scaling involves many
technologicalchallenges in terms of junction formation. Solid phase epitaxial regrowth …
technologicalchallenges in terms of junction formation. Solid phase epitaxial regrowth …