Flexible electronic devices have shown increasingly promising value facilitating our daily
lives. However, flexible spintronic devices remain in their infancy. Here, this research …

Modification of the magnetic properties under the induced strain and curvature is a
promising avenue to build three-dimensional magnetic devices, based on the domain wall …

The exchange bias (EB) effect plays an undisputed role in the state‐of‐art spintronic
devices, both rigid and flexible. However, the poor stability of EB under mechanical strain is …

Spin–orbit torque (SOT)-induced perpendicular magnetization switching is one of the key
solutions for the next generation of magnetic memory and spin logic applications. Recently …

Spin-orbit torque (SOT) based magnetization switching is of current technological interest to
demonstrate its utilization in nonvolatile embedded memory and logic devices. These …

This study presents experimental evidence of the substantial modulation of ferromagnetism
and spin–orbit torque (SOT) efficiency in a Ta/Pt/Co/Ta/In 2 Se 3 heterostructure with …

We study the W/Cu multilayers as a spin current source and the coherent spin–orbit torques
in a Fe layer using the spin-torque ferromagnetic resonance (STFMR) technique. With …

The saturated magnetization (m tot) and the Gilbert damping constant (α) are the two key
factors that determine the critical current density of the magnetization reversal in the spin …

We propose the use of mechanical strain and mild annealing to achieve reversible
modulation of spin–orbit torque (SOT) and Gilbert damping parameter. X-ray diffraction …

Magnetization manipulation caused by spin–orbit torque is one of the central themes
investigated in spintronics domain. The spin–orbit torque efficiencies can be manoeuvred by …