The coexistence of metallic and semiconducting polymorphs in transition-metal
dichalcogenides (TMDCs) can be utilized to solve the large contact resistance issue in …

Over the past 70 years, the semiconductor industry has undergone transformative changes,
largely driven by the miniaturization of devices and the integration of innovative structures …

A parameter-free first principle modeling methodology is reported with emphasis on
simulating effects of atomistic disorder in nano-scale transistors. The technique is based on …

In this work, we propose a novel Graphene field effect transistor (GFET) with ohmic
Source/Drain contacts having capacitive extension towards the Gate. The ohmic contacts of …

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) are atomically thin,
layered materials with unique physical and electronic properties relative to their bulk forms …

In the past five decades, the size of electronic devices in a computer chip has shrunk
exponentially according to the Moore's law—which states that the number of transistors on …

Molybdenum disulfide (MoS 2) is a new emerging 2D material like graphene for applications
in solid state, optoelectronic and many other devices. MoS 2 has good bandgap for …

Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDCs) are layered
materials in which each unit consists of a transition metal (Mo, and W) layer sandwiched …