Comparison of parameter variation of InAs quantum dots embedded in GaAs/Al0.30Ga0.70As structures with different capping/buffer quantum wells at annealing
RC Tamayo, TV Torchynska, G Polupan… - Journal of Materials …, 2023 - Springer
The emission variation with annealing in GaAs/Al0. 30Ga0. 70As structures with quantum
dots of InAs (QDs) located in different capping/buffer wells (QWs) is investigated. Two types …
dots of InAs (QDs) located in different capping/buffer wells (QWs) is investigated. Two types …
Annealing Impact on Emission of InAs Quantum Dots in GaAs/Al0.30Ga0.70As Structures with Different Capping Layers
TV Torchynska, RC Tamayo, G Polupan… - Journal of Electronic …, 2021 - Springer
The impact of annealing on the emission of InAs quantum dots (QDs) has been investigated
in the GaAs/Al0. 30Ga0. 70As structures with different compositions of the quantum well …
in the GaAs/Al0. 30Ga0. 70As structures with different compositions of the quantum well …
In-Situ Tailoring of Vertically Coupled InAs pip Quantum-Dot Infrared Photodetectors: Toward Homogeneous Dot Size Distribution and Minimization of In–Ga …
The authors report a detailed analysis of an epitaxial growth technique for indium arsenide
(InAs) Quantum-dot infrared photodetectors circumvent the detrimental effects arising from …
(InAs) Quantum-dot infrared photodetectors circumvent the detrimental effects arising from …
Minimization of bandstructure dependent dark current in InAs/GaAs quantum dot photodetectors
H Rajanna, K Ghosh - Superlattices and Microstructures, 2021 - Elsevier
The paper presents a theoretical model which illustrates the electron capture and emission
dynamics in InAs/GaAs quantum dot (QD) photodetector and describes the bandstructure …
dynamics in InAs/GaAs quantum dot (QD) photodetector and describes the bandstructure …
Submonolayer quantum dots in PiP configuration: study on effects of monolayer coverage and stacking variations
Submonolayer (SML) quantum dots (QDs) have higher confinement than conventional
Stranski-Krastanov (SK) QDs. Moreover, hole-transport based QD infrared photodetectors …
Stranski-Krastanov (SK) QDs. Moreover, hole-transport based QD infrared photodetectors …
Effect of vertical induced strain on growth kinetics of self-assembled epitaxially grown InAs surface quantum dots
Over the last decade InAs Stranski–Krastanov (SK) quantum dots (QDs) grown on GaAs
substrate have been widely explored for optoelectronic devices. In the recent past, the …
substrate have been widely explored for optoelectronic devices. In the recent past, the …