Ge bidirectional diffusion to simultaneously engineer back interface and bulk defects in the absorber for efficient CZTSSe solar cells
Aiming at a large open‐circuit voltage (VOC) deficit in Cu2ZnSn (S, Se) 4 (CZTSSe) solar
cells, a new and effective strategy to simultaneously regulate the back interface and restrain …
cells, a new and effective strategy to simultaneously regulate the back interface and restrain …
Point defects, compositional fluctuations, and secondary phases in non-stoichiometric kesterites
The efficiency of kesterite-based solar cells is limited by various non-ideal recombination
paths, amongst others by a high density of defect states and by the presence of binary or …
paths, amongst others by a high density of defect states and by the presence of binary or …
Recent developments and prospects of copper tin sulphide (Cu2SnS3) thin films for photovoltaic applications
Ternary copper tin sulphide, Cu 2 SnS 3 (CTS) is prominent material of semiconductor
industry due to p-type semiconducting, sufficient band gap, high mobility, high carrier …
industry due to p-type semiconducting, sufficient band gap, high mobility, high carrier …
The band gap of Cu2ZnSnSe4: Effect of order-disorder
G Rey, A Redinger, J Sendler, TP Weiss… - Applied Physics …, 2014 - pubs.aip.org
The order-disorder transition in kesterite Cu 2 ZnSnSe 4 (CZTSe), an interesting material for
solar cell, has been investigated by spectrophotometry, photoluminescence (PL), and …
solar cell, has been investigated by spectrophotometry, photoluminescence (PL), and …
Towards low cost and sustainable thin film thermoelectric devices based on quaternary chalcogenides
A major challenge in thermoelectrics (TEs) is developing devices made of sustainable,
abundant, and non‐toxic materials. Furthermore, the technological drive toward low sizes …
abundant, and non‐toxic materials. Furthermore, the technological drive toward low sizes …
Improved performance of Ge‐alloyed CZTGeSSe thin‐film solar cells through control of elemental losses
CJ Hages, S Levcenco, CK Miskin… - Progress in …, 2015 - Wiley Online Library
Abstract Nanocrystal‐based Cu2Zn (SnyGe1‐y)(SxSe4‐x)(CZTGeSSe) thin‐film solar cell
absorbers with tunable band gap have been prepared. Maximum solar‐conversion total …
absorbers with tunable band gap have been prepared. Maximum solar‐conversion total …
[图书][B] Earth-abundant materials for solar cells: Cu2-II-IV-VI4 semiconductors
S Adachi - 2015 - books.google.com
Systematically describes the physical and materials properties of copper-based quaternary
chalcogenide semiconductor materials, enabling their potential for photovoltaic device …
chalcogenide semiconductor materials, enabling their potential for photovoltaic device …
Influence of compositionally induced defects on the vibrational properties of device grade Cu2ZnSnSe4 absorbers for kesterite based solar cells
This work presents a detailed analysis of the impact of compositionally induced defects on
the vibrational properties of Cu 2 ZnSnSe 4 absorbers for kesterite based solar cells …
the vibrational properties of Cu 2 ZnSnSe 4 absorbers for kesterite based solar cells …
Optoelectronic and material properties of nanocrystal-based CZTSe absorbers with Ag-alloying
In this work, the benefits of Ag-alloying in kesterite solar cells are explored in terms of
tunable band gap, improved grain growth, improved minority carrier lifetime, reduced defect …
tunable band gap, improved grain growth, improved minority carrier lifetime, reduced defect …
Polarized Raman scattering study of kesterite type Cu2ZnSnS4 single crystals
A non-destructive Raman spectroscopy has been widely used as a complimentary method
to X-ray diffraction characterization of Cu2ZnSnS4 (CZTS) thin films, yet our knowledge of …
to X-ray diffraction characterization of Cu2ZnSnS4 (CZTS) thin films, yet our knowledge of …