[HTML][HTML] 2D materials for spintronic devices
EC Ahn - npj 2D Materials and Applications, 2020 - nature.com
Abstract 2D materials are attractive for nanoelectronics due to their ultimate thickness
dimension and unique physical properties. A wide variety of emerging spintronic device …
dimension and unique physical properties. A wide variety of emerging spintronic device …
Synthetic antiferromagnetic spintronics
Spintronic and nanomagnetic devices often derive their functionality from layers of different
materials and the interfaces between them. We discuss the opportunities that arise from …
materials and the interfaces between them. We discuss the opportunities that arise from …
The emergence of spin electronics in data storage
C Chappert, A Fert, FN Van Dau - Nature materials, 2007 - nature.com
Electrons have a charge and a spin, but until recently these were considered separately. In
classical electronics, charges are moved by electric fields to transmit information and are …
classical electronics, charges are moved by electric fields to transmit information and are …
[PDF][PDF] Spin-transfer torque MRAM (STT-MRAM): Challenges and prospects
Y Huai - AAPPS bulletin, 2008 - academia.edu
Spin-transfer torque (STT) switching demonstrated in submicron sized magnetic tunnel
junctions (MTJs) has stimulated considerable interest for developments of STT switched …
junctions (MTJs) has stimulated considerable interest for developments of STT switched …
Ruderman–Kittel–Kasuya–Yosida-type interlayer Dzyaloshinskii–Moriya interaction in synthetic magnets
Conduction electron spins interacting with magnetic impurity spins can mediate an interlayer
exchange interaction, namely, the Ruderman–Kittel–Kasuya–Yosida (RKKY) interaction …
exchange interaction, namely, the Ruderman–Kittel–Kasuya–Yosida (RKKY) interaction …
[HTML][HTML] Reducing Dzyaloshinskii-Moriya interaction and field-free spin-orbit torque switching in synthetic antiferromagnets
Perpendicularly magnetized synthetic antiferromagnets (SAF), possessing low net
magnetization and high thermal stability as well as easy reading and writing characteristics …
magnetization and high thermal stability as well as easy reading and writing characteristics …
Magnetic tunnel junctions for spintronic memories and beyond
In this paper, recent developments in magnetic tunnel junctions (MTJs) are reported with
their potential impacts on integrated circuits. MTJs consist of two metal ferromagnets …
their potential impacts on integrated circuits. MTJs consist of two metal ferromagnets …
Low-energy truly random number generation with superparamagnetic tunnel junctions for unconventional computing
Low-energy random number generation is critical for many emerging computing schemes
proposed to complement or replace von Neumann architectures. However, current random …
proposed to complement or replace von Neumann architectures. However, current random …
Fabrication of a nonvolatile full adder based on logic-in-memory architecture using magnetic tunnel junctions
S Matsunaga, J Hayakawa, S Ikeda… - Applied Physics …, 2008 - iopscience.iop.org
Nonvolatile logic-in-memory architecture, where nonvolatile memory elements are
distributed over a logic-circuit plane, is expected to realize both ultra-low-power and …
distributed over a logic-circuit plane, is expected to realize both ultra-low-power and …
Stochastic memory devices for security and computing
With the widespread use of mobile computing and internet of things, secured communication
and chip authentication have become extremely important. Hardware‐based security …
and chip authentication have become extremely important. Hardware‐based security …