[HTML][HTML] 2D materials for spintronic devices

EC Ahn - npj 2D Materials and Applications, 2020 - nature.com
Abstract 2D materials are attractive for nanoelectronics due to their ultimate thickness
dimension and unique physical properties. A wide variety of emerging spintronic device …

Synthetic antiferromagnetic spintronics

RA Duine, KJ Lee, SSP Parkin, MD Stiles - Nature physics, 2018 - nature.com
Spintronic and nanomagnetic devices often derive their functionality from layers of different
materials and the interfaces between them. We discuss the opportunities that arise from …

The emergence of spin electronics in data storage

C Chappert, A Fert, FN Van Dau - Nature materials, 2007 - nature.com
Electrons have a charge and a spin, but until recently these were considered separately. In
classical electronics, charges are moved by electric fields to transmit information and are …

[PDF][PDF] Spin-transfer torque MRAM (STT-MRAM): Challenges and prospects

Y Huai - AAPPS bulletin, 2008 - academia.edu
Spin-transfer torque (STT) switching demonstrated in submicron sized magnetic tunnel
junctions (MTJs) has stimulated considerable interest for developments of STT switched …

Ruderman–Kittel–Kasuya–Yosida-type interlayer Dzyaloshinskii–Moriya interaction in synthetic magnets

S Liang, R Chen, Q Cui, Y Zhou, F Pan, H Yang… - Nano Letters, 2023 - ACS Publications
Conduction electron spins interacting with magnetic impurity spins can mediate an interlayer
exchange interaction, namely, the Ruderman–Kittel–Kasuya–Yosida (RKKY) interaction …

[HTML][HTML] Reducing Dzyaloshinskii-Moriya interaction and field-free spin-orbit torque switching in synthetic antiferromagnets

R Chen, Q Cui, L Liao, Y Zhu, R Zhang, H Bai… - Nature …, 2021 - nature.com
Perpendicularly magnetized synthetic antiferromagnets (SAF), possessing low net
magnetization and high thermal stability as well as easy reading and writing characteristics …

Magnetic tunnel junctions for spintronic memories and beyond

S Ikeda, J Hayakawa, YM Lee… - … on Electron Devices, 2007 - ieeexplore.ieee.org
In this paper, recent developments in magnetic tunnel junctions (MTJs) are reported with
their potential impacts on integrated circuits. MTJs consist of two metal ferromagnets …

Low-energy truly random number generation with superparamagnetic tunnel junctions for unconventional computing

D Vodenicarevic, N Locatelli, A Mizrahi, JS Friedman… - Physical Review …, 2017 - APS
Low-energy random number generation is critical for many emerging computing schemes
proposed to complement or replace von Neumann architectures. However, current random …

Fabrication of a nonvolatile full adder based on logic-in-memory architecture using magnetic tunnel junctions

S Matsunaga, J Hayakawa, S Ikeda… - Applied Physics …, 2008 - iopscience.iop.org
Nonvolatile logic-in-memory architecture, where nonvolatile memory elements are
distributed over a logic-circuit plane, is expected to realize both ultra-low-power and …

Stochastic memory devices for security and computing

R Carboni, D Ielmini - Advanced Electronic Materials, 2019 - Wiley Online Library
With the widespread use of mobile computing and internet of things, secured communication
and chip authentication have become extremely important. Hardware‐based security …