Characterization and modeling of a 1.2-kV 30-A silicon-carbide MOSFET
Y Mukunoki, Y Nakamura, T Horiguchi… - … on Electron Devices, 2016 - ieeexplore.ieee.org
This paper describes a novel compact model for a SiC-MOSFET. The model is useful to
achieve accurate simulation of output characteristics from a linear region to a saturation …
achieve accurate simulation of output characteristics from a linear region to a saturation …
[PDF][PDF] 一种基于物理的SiC MOSFET 改进电路模型
李鑫， 罗毅飞， 史泽南， 王瑞田， 肖飞 - 电工技术学报, 2022 - dgjsxb.ces-transaction.com
摘要碳化硅(SiC) 材料因其在禁带宽度, 击穿电场, 电子饱和速度等方面的优势, 使得SiC
MOSFET 具有高频, 高压以及高温等优势. 然而SiC MOSFET 的特殊材料, 结构以及高开关速度 …
MOSFET 具有高频, 高压以及高温等优势. 然而SiC MOSFET 的特殊材料, 结构以及高开关速度 …
PSpice modeling platform for SiC power MOSFET modules with extensive experimental validation
L Ceccarelli, F Iannuzzo… - 2016 IEEE Energy …, 2016 - ieeexplore.ieee.org
The aim of this work is to present a PSpice implementation for a well-established and
compact physics-based SiC MOSFET model, including a fast, experimental-based …
compact physics-based SiC MOSFET model, including a fast, experimental-based …
A new modeling approach for predicting the static and dynamic behavior of SiC power MOSFETs
A AlHoussein, H Alawieh, Z Riah… - 2018 International …, 2018 - ieeexplore.ieee.org
This paper presents a new SiC power MOSFET model developed with emphasis on being
able to reproduce the dynamic behavior during the switching phase, in order to have a …
able to reproduce the dynamic behavior during the switching phase, in order to have a …
Analytical and experimental validation of parasitic components influence in SiC MOSFET three-phase grid-connected inverter
With the development of renewable energy, grid-connected inverter technology has become
an important research area. When compared with traditional silicon IGBT power devices, the …
an important research area. When compared with traditional silicon IGBT power devices, the …
Transient analysis in dynamic reconfigurable battery system
With the fast-paced deployment of battery energy storage systems (BESSs), efficiency and
safety issues of BESS, caused by the notorious “bucket effect”, have become prominent …
safety issues of BESS, caused by the notorious “bucket effect”, have become prominent …
A Behavior Model of Planar SiC MOSFET Considering Avalanche Breakdown
A behavior model of planar Silicon Carbide MOSFET considering avalanche breakdown is
proposed in this paper. This model is consisted of a traditional MOSFET model and a …
proposed in this paper. This model is consisted of a traditional MOSFET model and a …
Assessment of PSpice model for commercial SiC MOSFET power modules
D Johannesson, M Nawaz - 2015 IEEE 3rd Workshop on Wide …, 2015 - ieeexplore.ieee.org
In this paper, a circuit level simulation model for SiC MOSFET power modules has been
assessed. The static and dynamic characteristics of a 1.2 kV 800 A SiC MOSFET power …
assessed. The static and dynamic characteristics of a 1.2 kV 800 A SiC MOSFET power …
Modeling and analysis of the characteristics of SiC MOSFET
G Qiu, K Jiang, S Xu, X Yang… - Journal of Physics …, 2021 - iopscience.iop.org
Although the superior performance of SiC MOSFET devices has beenvalidated by many
studies, it is necessary to overcome many technical bottlenecks to make SiC MOSFET …
studies, it is necessary to overcome many technical bottlenecks to make SiC MOSFET …
Performance comparison and practical implementation of IFOC technique between Si-and SiC-based Inverter in EVs
Application of the field orientated control (FOC) to the AC induction motor results in the
instant control of a high-performance drive, namely short response time with neither the …
instant control of a high-performance drive, namely short response time with neither the …