As semiconductor integrated circuits (SICs) have been developed to scale down to obtain
higher integration and better performance, more chemical mechanical polishing (CMP) …

Chemical mechanical polishing (CMP) is widely used as an ultra-precision machining
technology, which determines the final fabrication accuracy of the device. CeO 2 abrasives …

Ceria (CeO 2) abrasive is extensively used in the chemical mechanical polishing process
(CMP) for shallow trench isolation (STI) owing to its capability to form Ce-O-Si bonds with the …

Abrasive-free slurries which control polysilicon removal and surface roughness are highly
desirable for polysilicon buffing chemical mechanical planarization (CMP). Here, we show …

Ceria slurries are used in the oxide chemical mechanical polishing (CMP) process due to
their high polishing performance and selectivity characteristics. However, it takes great effort …

In this study, the effect of viscosity on ceria abrasive removal during the buff clean process
was investigated. First, a numerical simulation was performed to observe the shear stress on …

In the present study, hydrogen water was applied to ceria abrasive removal in post-CMP
cleaning. The surface of the ceria abrasive was reduced by the hydrogen water from the Ce …

The high-speed impact of liquid microdroplets has emerged as a promising method to
eliminate nanoparticle contaminants from semiconductor wafer surfaces. However, existing …

As a trend of using colloidal and smaller ceria nanoparticles (CNPs) at the shallow trench
isolation (STI) chemical mechanical polishing (CMP) in semiconductor manufacturing, post …

The cleaning mechanism for brush scrubbing, known as the contact-type cleaning method,
utilizes the direct contact of impurities onto brushes or brush-induced fluid flow depending …