Enhanced Stability and Tunable Photoluminescence in Perovskite CsPbX3/ZnS Quantum Dot Heterostructure

W Chen, J Hao, W Hu, Z Zang, X Tang, L Fang, T Niu… - Small, 2017 - Wiley Online Library
All‐inorganic perovskite CsPbX3 (X= Cl, Br, I) and related materials are promising
candidates for potential solar cells, light emitting diodes, and photodetectors. Here, a novel …

Impedance spectroscopy: a versatile technique to understand solution‐processed optoelectronic devices

S Ali, S Chang, M Imran, Q Shi, Y Chen… - physica status solidi …, 2019 - Wiley Online Library
Solution‐processed optoelectronic devices based on conjugated polymers, colloidal
quantum dots (CQDs), halide perovskites, and so on are now emerging as a new …

Metamaterials for light extraction and shaping of micro-scale light-emitting diodes: from the perspective of one-dimensional and two-dimensional photonic crystals

E Chen, M Zhao, K Chen, H Jin, X Chen, J Sun… - Optics …, 2023 - opg.optica.org
Metamaterials have attracted broad attention owing to their unique versatile micro-and nano-
structures. As a kind of typical metamaterial, photonic crystals (PhCs) are capable of …

The first report of deep eutectic solvent (DES) nano‐photocatalyst (n‐TiO2‐P25@TDI@DES (urea: ZnCl2)) and its application on selective oxidation of benzyl …

S Taghavi, A Amoozadeh… - Journal of Chemical …, 2021 - Wiley Online Library
BACKGROUND Deep eutectic solvents (DESs) are prepared by mixing solid organic
precursors to form a liquid driven from strong hydrogen‐bond interactions. The physical and …

Working mechanisms of nanoscale light-emitting diodes operating in non-electrical contact and non-carrier injection mode: Modeling and simulation

W Li, K Wang, J Li, C Wu, Y Zhang, X Zhou, T Guo - Nanomaterials, 2022 - mdpi.com
Non-electrical contact and non-carrier injection (NEC&NCI) mode is an emerging driving
mode for nanoscale light-emitting diodes (LEDs), aiming for applications in nano-pixel light …

Enhanced carrier injection in AlGaN-based deep ultraviolet light-emitting diodes by polarization engineering at the LQB/p-EBL interface

M Liu, C Liu - IEEE Photonics Journal, 2022 - ieeexplore.ieee.org
The external quantum efficiency (EQE) of AlGaN-based deep ultraviolet light-emitting diodes
(DUV LEDs) is still far from satisfactory due to the main issues of electron leakage and …

Heterostructure of CsPbBr3-CdS perovskite quantum dots for enhanced stability and charge transfer

CH Ravikumar, N Maroli, B Kulkarni… - Materials Science and …, 2022 - Elsevier
CsPbBr 3 quantum dot (PQD) was interfaced with CdS quantum dot (QD), via modified hot
injection method to form a heterostructure, across whose interface a significantly enhanced …

InGaN/GaN blue light emitting diodes using freestanding GaN extracted from a Si substrate

M Lee, M Yang, KM Song, S Park - ACS Photonics, 2018 - ACS Publications
We demonstrate the first InGaN/GaN blue light emitting diodes (LEDs) on freestanding GaN
grown using a Si substrate. Transmission electron microscopy and X-ray diffraction analysis …

Stress and dislocation control of GaN epitaxial films grown on Si substrates and their application in high-performance light-emitting diodes

Y Li, W Wang, X Li, L Huang, Z Lin, Y Zheng… - Journal of Alloys and …, 2019 - Elsevier
GaN-based light-emitting diodes (LEDs) on Si substrates are promising to replace
conventional lamps due to the advantages of energy-saving and low-cost of LEDs grown on …

Monolithic high performance InGaN/GaN white LEDs with a tunnel junction cascaded yellow and blue light-emitting structures

M Saha, A Biswas, H Karan - Optical Materials, 2018 - Elsevier
We propose a phosphor-free dual wavelength monolithic white LED comprising a tunnel
junction that separates a yellow light-emitting InGaN/GaN multiple quantum well (MQW) …