Abstract Lanthanum germanide (La6Ge) thin films are successfully fabricated using the
thermal evaporation technique under a vacuum pressure of 10− 5 mbar. The resulting films …

Herein, stacked nanosheets of Au (50 nm) and MgSe (100 nm) are fabricated by the thermal
evaporation technique and welded by pulsed lasers of wavelengths of 1064 nm within few …

Herein a new class of MgSe gigahertz/terahertz band filters operatives in the frequency
domain of 1.0 GHz-1.86 THz is fabricated and experimentally tested. MgSe band filters are …

Herein, LaGe2 thin films with thickness of 150 nm are grown on thin layers of indium by the
thermal evaporation technique under a vacuum pressure of 10− 5 mbar. The films are …

Herein stacked layers of metallic indium (150 nm) and platinum (50–250 nm) thin films are
fabricated as a terahertz/gigahertz filters. Indium thin films are produced by the thermal …

In this work, thin film of p-PbSe is coated onto n-Si thin crystals to perform as multifunctional
devices. The devices are fabricated by the thermal evaporation technique under a vacuum …

Herein, a 200 nm thick films of p− p- SnO2 are deposited onto p− p- Nb2O5 thin substrates
(100 nm) to construct an isotype p− p- Nb2O5/p− p- SnO2 (NSO) heterojunction devices …

In this study, thin films of CuInSe2 (CIS) are expeditiously fabricated within 1 s utilizing the
pulsed laser welding (PLW) technique. Preceding the PLW process, thin films of InSe (500 …

Herein amorphous WO3 thin films prepared by the thermal evaporation technique under a
vacuum pressure of 10− 5 mbar are treated via pulsed laser welding technique (PLW) in an …