Doping effects on minority carrier parameters in bulk GaAs

S Ilahi - Physica B: Condensed Matter, 2023 - Elsevier
In this paper, we measured the experimental amplitude and phase of the Photothermal
deflection signal for bulk GaAs “silicon” doped n+ type,“chromium” doped n type and …

Modeling and simulation of GaAsPN/GaP quantum dot structure for solar cell in intermediate band solar cell applications

A Aissat, L Chenini, S Nacer… - International Journal of …, 2022 - Wiley Online Library
This effort is founded on the modeling and simulation of the GaAsPN/GaP quantum dot (QD)
solar cell. This quaternary alloy is one of the III‐V semiconductors, which gained importance …

[HTML][HTML] Quantitative photothermal investigation of nonradiative recombination parameters in GaAs/InAs (QD)/GaAs quantum dot structures using a three-layer laser …

S Bouagila, S Ilahi, M Baira, A Mandelis… - Journal of Applied …, 2024 - pubs.aip.org
In this paper, we developed a theoretical model for the photothermal deflection technique in
order to investigate the electronic parameters of three-layer semiconductor structures. This …

High minority carrier mobility and electronic diffusion length in annealed GaInAsSb/GaSb active layer in Vertical Cavity Surface Emitting Laser (VCSEL)

S Bouagila, S Ilahi, F Chouchene, N Yacoubi - Materials Research Bulletin, 2023 - Elsevier
Owing to its important role as an active layer for Vertical Cavity Surface Emitting laser
(VCSEL). We studied the transport properties in annealed GaInAsSb/GaSb by means of PTD …

Radiative and nonradiative recombination processes in GaNP (As) alloys

M Wełna, K Żelazna, A Létoublon, C Cornet… - Materials Science and …, 2022 - Elsevier
Abstract Recombination processes in GaNP (As) alloys were studied by an analysis of
photoluminescence spectra in wide temperature and excitation power ranges. Temperature …

[引用][C] Dual-Functional Light-Emitting and Photo-Detecting Gaaspn-Based Heterostructures on Silicon

V Fedorov, LN Dvoretckaia, AM Mozharov, SV Fedina… - Available at SSRN 4314788