Estimates of valence-band and conduction-band offsets for lattice-matched and
pseudomorphic strained heterostructures of six technologically important III-V quaternary …

We present a multi‐dimensional model for comprehensive simulations of solar cells (SCs),
considering both electromagnetic and electronic properties. Typical homojunction and …

Electrical properties of atomic layer deposited Al 2 O 3/β-Ga 2 O 3 interface were
investigated. We determined the conduction band offset and interface charge density of Al 2 …

We have independently estimated the conduction‐and valence‐band offsets Δ E c and Δ E v
in GaAs/Ga0. 51In0. 49P quantum wells by measuring the capacitance transient resulting …

Изложены теоретические основы адмиттансных методов исследования
полупроводников и базирующиеся на них методы диагностики квантово-размерных …

A comprehensive analytical model for the operating characteristics of semiconductor lasers
with a low-dimensional active region is developed. Particular emphasis is given to the effect …

InGaAs strained quantum wells (QWs) with GaAs, AlGaAs, and GaAsP barriers are widely
used in optically pumped vertical-external-cavity surface-emitting lasers operating at 1 μ m …

Improving visible light absorption plays an important roll on the utilization of solar power for
the photocatalyst. Using first-principles calculation with the HSE06 functional, we propose …

В работе рассматривается задача о пространственной упаковке частиц, применяемых
в композитных материалах, в рамках модели твердых сфер. На основе полученного …

We use spin-density-functional theory within an envelope function approach to calculate
electronic states in a GaAs/InAs core-shell nanowire pierced by an axial magnetic field. Our …