Standards for the characterization of endurance in resistive switching devices

M Lanza, R Waser, D Ielmini, JJ Yang, L Goux… - ACS …, 2021 - ACS Publications
Resistive switching (RS) devices are emerging electronic components that could have
applications in multiple types of integrated circuits, including electronic memories, true …

A review on device requirements of resistive random access memory (RRAM)-based neuromorphic computing

JH Yoon, YW Song, W Ham, JM Park, JY Kwon - APL Materials, 2023 - pubs.aip.org
With the arrival of the era of big data, the conventional von Neumann architecture is now
insufficient owing to its high latency and energy consumption that originate from its …

Analog synaptic behavior of a silicon nitride memristor

S Kim, H Kim, S Hwang, MH Kim… - … applied materials & …, 2017 - ACS Publications
In this paper, we present a synapse function using analog resistive-switching behaviors in a
SiN x-based memristor with a complementary metal-oxide-semiconductor compatibility and …

Mimicking biological synapses with a-HfSiOx-based memristor: implications for artificial intelligence and memory applications

M Ismail, M Rasheed, C Mahata, M Kang, S Kim - Nano Convergence, 2023 - Springer
Memristors, owing to their uncomplicated structure and resemblance to biological synapses,
are predicted to see increased usage in the domain of artificial intelligence. Additionally, to …

Forming-free Pt/Al2O3/HfO2/HfAlOx/TiN memristor with controllable multilevel resistive switching and neuromorphic characteristics for artificial synapse

M Ismail, C Mahata, S Kim - Journal of Alloys and Compounds, 2022 - Elsevier
Controllable multilevel resistive switching (RS) and neuromorphic characteristics emerges
as a promising paradigm to build power-efficient computing hardware for high density data …

Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films

J Shang, W Xue, Z Ji, G Liu, X Niu, X Yi, L Pan, Q Zhan… - Nanoscale, 2017 - pubs.rsc.org
Flexible and transparent resistive switching memories are highly desired for the construction
of portable and even wearable electronics. Upon optimization of the microstructure wherein …

Electronic synaptic plasticity and analog switching characteristics in Pt/TiOx/AlOx/AlTaON/TaN multilayer RRAM for artificial synapses

M Ismail, C Mahata, S Kim - Applied Surface Science, 2022 - Elsevier
In this work, electronic synaptic plasticity and analog bipolar switching behavior by using a
Pt/TiO x/AlO x/AlTaON/TaN multilayer resistive random-access memory (RRAM) device were …

Tunable voltage polarity-dependent resistive switching characteristics by interface energy barrier modulation in ceria-based bilayer memristors for neuromorphic …

S Moon, K Park, PH Chung, DP Sahu… - Journal of Alloys and …, 2023 - Elsevier
Synaptic characteristics with tunable dependence on the voltage polarity are demonstrated
in ceria (CeO 2) and Gd-doped ceria (GDC) bilayer memristors with respect to their stacking …

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

AM Rana, T Akbar, M Ismail, E Ahmad, F Hussain… - Scientific reports, 2017 - nature.com
Resistance switching characteristics of CeO2/Ti/CeO2 tri-layered films sandwiched between
Pt bottom electrode and two different top electrodes (Ti and TaN) with different work …

Logic Gate Circuits Based on CeOx/WOy Memristor for the Odd/Even Checker and Encryption/Decryption of Image Applications

J Wang, H Wang, Z Cao, S Zhu, J Du… - Advanced Functional …, 2024 - Wiley Online Library
Due to its powerful brain‐like parallel computing and efficient data processing capabilities,
memristors are considered to be the core components for building the next generation of …