Standards for the characterization of endurance in resistive switching devices
Resistive switching (RS) devices are emerging electronic components that could have
applications in multiple types of integrated circuits, including electronic memories, true …
applications in multiple types of integrated circuits, including electronic memories, true …
A review on device requirements of resistive random access memory (RRAM)-based neuromorphic computing
With the arrival of the era of big data, the conventional von Neumann architecture is now
insufficient owing to its high latency and energy consumption that originate from its …
insufficient owing to its high latency and energy consumption that originate from its …
Analog synaptic behavior of a silicon nitride memristor
In this paper, we present a synapse function using analog resistive-switching behaviors in a
SiN x-based memristor with a complementary metal-oxide-semiconductor compatibility and …
SiN x-based memristor with a complementary metal-oxide-semiconductor compatibility and …
Mimicking biological synapses with a-HfSiOx-based memristor: implications for artificial intelligence and memory applications
Memristors, owing to their uncomplicated structure and resemblance to biological synapses,
are predicted to see increased usage in the domain of artificial intelligence. Additionally, to …
are predicted to see increased usage in the domain of artificial intelligence. Additionally, to …
Forming-free Pt/Al2O3/HfO2/HfAlOx/TiN memristor with controllable multilevel resistive switching and neuromorphic characteristics for artificial synapse
Controllable multilevel resistive switching (RS) and neuromorphic characteristics emerges
as a promising paradigm to build power-efficient computing hardware for high density data …
as a promising paradigm to build power-efficient computing hardware for high density data …
Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films
Flexible and transparent resistive switching memories are highly desired for the construction
of portable and even wearable electronics. Upon optimization of the microstructure wherein …
of portable and even wearable electronics. Upon optimization of the microstructure wherein …
Electronic synaptic plasticity and analog switching characteristics in Pt/TiOx/AlOx/AlTaON/TaN multilayer RRAM for artificial synapses
In this work, electronic synaptic plasticity and analog bipolar switching behavior by using a
Pt/TiO x/AlO x/AlTaON/TaN multilayer resistive random-access memory (RRAM) device were …
Pt/TiO x/AlO x/AlTaON/TaN multilayer resistive random-access memory (RRAM) device were …
Tunable voltage polarity-dependent resistive switching characteristics by interface energy barrier modulation in ceria-based bilayer memristors for neuromorphic …
Synaptic characteristics with tunable dependence on the voltage polarity are demonstrated
in ceria (CeO 2) and Gd-doped ceria (GDC) bilayer memristors with respect to their stacking …
in ceria (CeO 2) and Gd-doped ceria (GDC) bilayer memristors with respect to their stacking …
Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material
Resistance switching characteristics of CeO2/Ti/CeO2 tri-layered films sandwiched between
Pt bottom electrode and two different top electrodes (Ti and TaN) with different work …
Pt bottom electrode and two different top electrodes (Ti and TaN) with different work …
Logic Gate Circuits Based on CeOx/WOy Memristor for the Odd/Even Checker and Encryption/Decryption of Image Applications
J Wang, H Wang, Z Cao, S Zhu, J Du… - Advanced Functional …, 2024 - Wiley Online Library
Due to its powerful brain‐like parallel computing and efficient data processing capabilities,
memristors are considered to be the core components for building the next generation of …
memristors are considered to be the core components for building the next generation of …