In this chapter we discuss the main open issues for GaN-based light-emitting diode
reliability. After a comprehensive review of the possible deep levels present in these …

GaN-based optoelectronic devices are the market standard for light emission in the blue-
green visible range, and the emission wavelengths are rapidly approaching the UV part of …

Both accelerated life tests and engineering practices present a common behavior: LED
products may encounter catastrophic failure under thermo-electric co-stressing. The present …

This paper reports an extensive analysis of the failure of high power replace with light-
emitting diodes (LEDs) submitted to electrical overstress (EOS). By using a custom EOS …

This chapter reviews the main physical mechanisms responsible for the degradation of
InGaN-based optoelectronic devices at chip level. The generation of defects caused by bias …

In this study, the small-size and side-view LED packages used in the backlight modules
were examined by performing the electrostatic discharge (ESD) process. The high voltages …

Questo lavoro di tesi è focalizzato sullo studio dell'affidabilità di dispositivi LED allo stato
dell'arte per applicazioni di illuminotecnica e sull'impatto dei meccanismi di diffusione in …

The research in optoelectronics has recently shown impressive advancements, thanks to the
development of disruptive technologies, such as Gallium Nitride LEDs and lasers-that are …

This chapter reviews the main issues related to the electrostatic discharge (ESD) instabilities
of electronic and optoelectronic devices based on gallium nitride; more specifically, we will …