2D/3D Hybrid of MoS2/GaN for a High-Performance Broadband Photodetector
Narrow spectral sensitivity in materials is one of the crucial challenges to develop high-
performance broadband photodetectors. Here, we design a heterostructure of two …
performance broadband photodetectors. Here, we design a heterostructure of two …
Recent progress of laser processing technology in micro-LED display manufacturing: A review
L Song, X Yong, P Zhang, S Song, K Chen… - Optics & Laser …, 2025 - Elsevier
Micro-LED undoubtedly stands out as a highly anticipated technology when it comes to the
innovation of future display technologies. Micro-LED technology surpasses traditional …
innovation of future display technologies. Micro-LED technology surpasses traditional …
Ultrashort pulse laser lift-off processing of InGaN/GaN light-emitting diode chips
N Yulianto, GTM Kadja, S Bornemann… - ACS Applied …, 2021 - ACS Publications
Gallium nitride (GaN) film delamination is an important process during the fabrication of GaN
light-emitting diodes (LEDs) and laser diodes. Here, we utilize 520 nm femtosecond laser …
light-emitting diodes (LEDs) and laser diodes. Here, we utilize 520 nm femtosecond laser …
Non-thermal annealing of gamma irradiated GaN HEMTs with electron wind force
Radiation damage mitigation in electronics remains a challenge because the only
established technique, thermal annealing, does not guarantee a favorable outcome. In this …
established technique, thermal annealing, does not guarantee a favorable outcome. In this …
MoSe2/p-GaN heterojunction for enhanced UV and NIR photodetector
In recent years, p–n junction devices formed by wide-bandgap semiconductors and layered
transition metal dichalcogenides have been promising candidates for applications in …
transition metal dichalcogenides have been promising candidates for applications in …
Lattice-matched AlInN/GaN multi-channel heterostructure and HEMTs with low on-resistance
In this paper, a high-performance multi-channel heterostructure based on lattice-matched
AlInN/GaN has been reported. The stacking of five heterostructures yields a high two …
AlInN/GaN has been reported. The stacking of five heterostructures yields a high two …
Correlation of crystalline and optical properties with UV photodetector characteristics of GaN grown by laser molecular beam epitaxy on a-sapphire
We have studied the crystalline, optical and photo-response properties of epitaxial GaN films
grown on bare-and pre-nitridated a-sapphire substrates with different thicknesses of low …
grown on bare-and pre-nitridated a-sapphire substrates with different thicknesses of low …
Structural, optical and electronic properties of homoepitaxial GaN nanowalls grown on GaN template by laser molecular beam epitaxy
We have grown homoepitaxial GaN nanowall networks on GaN template using an ultra-high
vacuum laser assisted molecular beam epitaxy system by ablating solid GaN target under a …
vacuum laser assisted molecular beam epitaxy system by ablating solid GaN target under a …
Influence of current conduction paths and native defects on gas sensing properties of polar and non-polar GaN
The CO gas sensing characteristics of polar GaN (P–GaN) and non-polar GaN (NP–GaN)
thin-films grown by RF–plasma assisted molecular beam epitaxy on c–Al 2 O 3 and r–Al 2 O …
thin-films grown by RF–plasma assisted molecular beam epitaxy on c–Al 2 O 3 and r–Al 2 O …
MAX-phase films overcome scaling limitations to the resistivity of metal thin films
JE Yoo, JY Sung, JH Hwang, I Maeng… - … Applied Materials & …, 2021 - ACS Publications
Metal thin films have been widely used as conductors in semiconductor devices for several
decades. However, the resistivity of metal thin films such as Cu and TiN increases …
decades. However, the resistivity of metal thin films such as Cu and TiN increases …