A study of the structural and surface morphology and photoluminescence of ni-doped aln thin films grown by co-sputtering
Aluminum nitride (AlN) is a semiconductor material possessing a hexagonal wurtzite crystal
structure with a large band gap of 6.2 eV. AlN thin films have several potential applications …
structure with a large band gap of 6.2 eV. AlN thin films have several potential applications …
Mechanical and Optical Investigations of Cr Thin Films Deposited on Si Substrate
Chromium thin films were prepared by high-power impulse magnetron sputtering and
investigated by both mechanical and optical techniques to extract, characterize, and …
investigated by both mechanical and optical techniques to extract, characterize, and …