Structures for a nanosheet field-effect transistor and methods for forming a structure for a
nanosheet field-effect transistor. A fin is formed that includes a first nanosheet channel layer …

Devices and methods are provided for fabricating field-effect transistors having source/drain
extension contacts to provide reduced parasitic resistance in electrical paths between …

Semiconductor devices are provided. The semiconductor devices may include a first wire
pattern extending in a first direction on a substrate and a second wire pattern on the first wire …

Devices and methods for forming a tight pitch stack nanowire without shallow trench
isolation including a base nanosheet formed on a substrate. At least one fin are formed, and …

Sacrificial gate structures are simultaneously formed in an isolation region that are wider
than the sacrificial gate structures formed in the active region. The wider sacrificial gate …

Embodiments of the present invention are directed to a method that prevents punch-through
of a bottom isolation layer and improves the quality of the source/drain epitaxial growth in a …

Embodiments of the invention are directed to a method that includes forming a first sacrificial
nanosheet over a substrate and forming a first nanosheet stack over the first sacrificial …

Waveguide structures and methods of fabricating waveguide structures. The waveguide
structures are formed using a semiconductor substrate that includes a device layer, a handle …

Semiconductor devices and methods for forming the semi conductor devices include forming
a sacrificial layer on a substrate on each side of a stack of nanosheets, the stack of …

A technique relates to a semiconductor device. A stack is formed over a bottom sacrificial
layer, and the bottom sacrificial layer is on a substrate. The bottom sacrificial layer is …