Normally-off p-GaN gated AlGaN/GaN HEMTs using plasma oxidation technique in access region
X Liu, HC Chiu, CH Liu, HL Kao… - IEEE Journal of the …, 2020 - ieeexplore.ieee.org
Normally-off p-GaN gated AlGaN/GaN high electron mobility transistors (HEMTs) were
developed. Oxygen plasma treatment converted a low-resistive p-GaN layer in the access …
developed. Oxygen plasma treatment converted a low-resistive p-GaN layer in the access …
Studies on fabrication and reliability of GaN high-resistivity-cap-layer HEMT
R Hao, N Xu, G Yu, L Song, F Chen… - … on Electron Devices, 2018 - ieeexplore.ieee.org
In this paper, we systematically investigate the effect of hydrogen plasma treatment radio
frequency (RF) power, treatment time, and rapid thermal annealing (RTA) on the …
frequency (RF) power, treatment time, and rapid thermal annealing (RTA) on the …
Normally-off AlGaN/GaN HEMTs with a Low Reverse Conduction Turn-on Voltage
DJ Lin, CK Chang, K Barman, YC Chu, W Shih… - IEEE …, 2023 - ieeexplore.ieee.org
Third quadrant operation is vital for power applications such as synchronous DC-DC
converters and inverters, which require a low drain-source voltage drop to reduce …
converters and inverters, which require a low drain-source voltage drop to reduce …
Low gate lag normally-off p-GaN/AlGaN/GaN high electron mobility transistor with zirconium gate metal
CH Liu, HC Chiu, CR Huang, KJ Chang, CT Chen… - Crystals, 2020 - mdpi.com
The impact of gate metal on the leakage current and breakdown voltage of normally-off p-
GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals …
GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals …
[HTML][HTML] Resonant driving scheme for p-doped gallium nitride high electron mobility transistor to reduce driving power loss
Z Wang, X Sun, B Ren, Z Chen - Energy Reports, 2023 - Elsevier
In high-frequency power electronics applications, gallium nitride high electron mobility
transistors (GaN HEMTs) can switch at frequencies of several megahertz. In this case, the …
transistors (GaN HEMTs) can switch at frequencies of several megahertz. In this case, the …
10 A/567 V normally off p‐GaN gate HEMT with high‐threshold voltage and low‐gate leakage current
R Hao, D Wu, K Fu, L Song, F Chen, J Zhao… - Electronics …, 2018 - Wiley Online Library
Normally off p‐gallium nitride (GaN) gate high‐electron‐mobility transistors (HEMTs) on
silicon substrate were fabricated with hydrogen plasma treatment technology, which features …
silicon substrate were fabricated with hydrogen plasma treatment technology, which features …
[PDF][PDF] 1000 V p-GaN 混合阳极AlGaN/GaN 二极管
唐文昕， 郝荣晖， 陈扶， 于国浩， 张宝顺 - 物理学报, 2018 - wulixb.iphy.ac.cn
GaN 材料具有优异的电学特性, 如大的禁带宽度(3.4 eV), 高击穿场强(3.3 MV/cm)
和高电子迁移率(600 cm2/(V· s)). AlGaN/GaN 异质结由于压电极化和自发极化效应 …
和高电子迁移率(600 cm2/(V· s)). AlGaN/GaN 异质结由于压电极化和自发极化效应 …
Threshold Voltage Investigation of Recessed Dual-Gate MISHEMT: Simulation Study
Simulation based investigation of Recessed Dual-Gate MISHEMT on sapphire substrate has
been presented in this work using ATLAS simulation software. Various DC performance …
been presented in this work using ATLAS simulation software. Various DC performance …
[PDF][PDF] Improved dynamic ON-resistance of a normally off p-GaN gate high-electron-mobility transistor using a nongated-region oxidation technique
HCW Chiu, CR Haung, X Liu - GaN, 2019 - csmantech.org
In this study, a device structure for a high-resistivity high-electron-mobility transistor (HR-
HEMT) was developed for a normally off p-GaN gate HEMT with low gate lag and high …
HEMT) was developed for a normally off p-GaN gate HEMT with low gate lag and high …