Challenges in materials and devices for resistive-switching-based neuromorphic computing

J Del Valle, JG Ramírez, MJ Rozenberg… - Journal of Applied …, 2018 - pubs.aip.org
This tutorial describes challenges and possible avenues for the implementation of the
components of a solid-state system, which emulates a biological brain. The tutorial is …

A leaky‐integrate‐and‐fire neuron analog realized with a Mott insulator

P Stoliar, J Tranchant, B Corraze… - Advanced Functional …, 2017 - Wiley Online Library
During the last half century, the tremendous development of computers based on von
Neumann architecture has led to the revolution of the information technology. However, von …

Memristive computing devices and applications

MA Zidan, A Chen, G Indiveri, WD Lu - Journal of Electroceramics, 2017 - Springer
Advances in electronics have revolutionized the way people work, play and communicate
with each other. Historically, these advances were mainly driven by CMOS transistor scaling …

Neuromorphic computing with memristive devices

W Ma, MA Zidan, WD Lu - Science China Information Sciences, 2018 - Springer
Technology advances in the last a few decades have resulted in profound changes in our
society, from workplaces to living rooms to how we socialize with each other. These changes …

Non-thermal resistive switching in Mott insulator nanowires

Y Kalcheim, A Camjayi, J Del Valle, P Salev… - Nature …, 2020 - nature.com
Resistive switching can be achieved in a Mott insulator by applying current/voltage, which
triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT …

Resistive switching in Mott insulators and correlated systems

E Janod, J Tranchant, B Corraze… - Advanced Functional …, 2015 - Wiley Online Library
Resistive random access memories (ReRAM) form an emerging type of non‐volatile
memories, based on an electrically driven resistive switching (RS) of an active material. This …

Direct Observation of the Electrically Triggered Insulator-Metal Transition in Far below the Transition Temperature

C Adda, MH Lee, Y Kalcheim, P Salev, R Rocco… - Physical Review X, 2022 - APS
Resistive switching is of the key phenomena for applications such as nonvolatile memories
or neuromorphic computing. V 3 O 5, a compound of the vanadium oxide Magnéli series, is …

Exponential escape rate of filamentary incubation in Mott spiking neurons

R Rocco, J del Valle, H Navarro, P Salev, IK Schuller… - Physical Review …, 2022 - APS
Mott materials such as vanadium oxides, when subject to a strong applied voltage, present
an inhomogeneous insulator-to-metal transition with formation of metallic filaments within …

Transverse barrier formation by electrical triggering of a metal-to-insulator transition

P Salev, L Fratino, D Sasaki, R Berkoun… - Nature …, 2021 - nature.com
Application of an electric stimulus to a material with a metal-insulator transition can trigger a
large resistance change. Resistive switching from an insulating into a metallic phase, which …

Dynamics of the electrically induced insulator-to-metal transition in rare-earth nickelates

J del Valle, R Rocco, C Domínguez, J Fowlie… - Physical Review B, 2021 - APS
Rare-earth nickelates feature an insulator-to-metal transition (IMT) that can be electrically
triggered. We study the dynamics of this electrically induced transition by comparing the time …