Double-sided, front and rear, tunnel oxide passivated contact (TOPCon) of crystalline silicon
(c-Si) solar cells on textured wafer is presented. The double-sided TOPCon structure is …

When a semiconductor host is doped by a foreign element, it is inevitable that a volume
change will occur in the doped system. This volume change depends on both the size and …

Previous calculations on n-type doping of diamond by P and S predicted that S has a
shallower level and a higher solubility than P. Our first-principles calculations show that the …

The effect of the high magnetic field (MF) on the distribution of solute concentration during
directional solidification of Al-Cu alloy under low growth speed was experimentally …

N-doped graphene (NGr) incorporated with 2H-MoS 2 and 1T-MoS 2 (NGr/2H (1T)-MoS 2)
composites have been explored as anode materials for Li/K-ions batteries (LIBs/PIBs) …

Doped silicon quantum dots (SiQDs) with defined size, dopant distribution, and surface
chemistry are highly sought after as a scientific curiosity because their unique properties …

Combinatorial screening of 150 supported metal oxide (manganese and additives) catalysts
was carried out via a high-throughput synthesis platform and parallel reactors for the …

Enhancing the dopability of semiconductors via strain engineering is critical to improving
their functionalities, which is, however, largely hindered by the lack of basic rules. In this …

According to first-principles calculations, the solubility of Mg as a substitute for Ga or Al in Al
x Ga 1–x N bulk is limited by large, positive formation enthalpies. In contrast to the bulk case …

In this work, we present a novel technological approach to form highly boron-doped
selective emitters. The selective emitters are formed by using a Laser Induced Forward …