We present a general algorithm for combining measurements taken under various
illumination and imaging conditions to quantitatively extract the amplitude and phase of an …

The Semiconductor High-Numerical-aperture (NA) Actinic Reticle Review Project (SHARP)
is an extreme ultraviolet (EUV)-wavelength, synchrotron-based microscope dedicated to …

Fourier ptychography is a computational imaging techniques that combines various full-field
coherent images acquired under varied illumination angles and combined to yield a angular …

Extreme ultraviolet (EUV) microscopy is invaluable for the development of EUV photomasks,
providing detailed information for the creation of new mask processes, and reliable feedback …

Extreme Ultraviolet (EUV) Lithography mask defects were examined on the actinic mask
imaging system, SHARP, at Lawrence Berkeley National Laboratory. A quantitative phase …

The SHARP high-numerical aperture actinic reticle review project is a synchrotron-based,
extreme ultraviolet (EUV) microscope dedicated to photomask research. SHARP emulates …

In this paper, we discuss the impact of optimized pupil engineering and photon noise on
native defect sensitivity in EUV actinic blank inspection. Native defects include phase …

1.1 Background To extend Moore's law down to signal digit nm scale, semiconductor
processing technology especially lithography needs new ways to print the desired circuit …

In this paper, we present a detail study of the impact of material-induced phase effect on the
EUV mask absorber defect through-focus behavior. Illumination, material properties, and …

We discuss the impact of various tool design perspectives on defect detection sensitivity for
dark-field-based extreme ultraviolet (EUV) actinic blank inspection. We consider the impact …