Thermal processing in the subsecond range comprises modern, non-equilibrium annealing
techniques which allow various material modifications at the surface without affecting the …

This review provides a comprehensive overview of the progress in light–material
interactions (LMIs), focusing on lasers and flash lights for energy conversion and storage …

Explosive crystallization (EC) takes place during flash lamp annealing in micrometer-thick
amorphous Si (a-Si) films deposited on glass substrates. The EC starts from the edges of the …

After a short introduction we will highlight processing issues (setup, comparison of
annealing methods, relevant requirements for annealing due to doping, diffusion, activation …

Atomic layer deposition (ALD) is known for depositing ultra-thin film materials that enable
control of composition, highly conformal film, desirable thickness, self-saturating, and …

Polycrystalline silicon (poly-Si) films as thick as 4.5 µm are prepared by flash lamp
annealing (FLA) of amorphous silicon (a-Si) films without thermal damage onto glass …

Flash-lamp annealing (FLA) on a millisecond time scale has been shown to be a promising
tool in the preparation of high-quality semiconducting materials. The process imposes time …

Heavily p-type doped Ge layers were fabricated by 100 keV Ga implantation and
subsequent flash lamp annealing for 3 ms in the temperature range between 700 and 900 …

Thermal processing in the millisecond range provides advanced, non-equilibrium annealing
techniques which allow dedicated material modifications at the surface without affecting the …

Flash lamp annealing (FLA) can induce the explosive crystallization (EC) of micrometer-
order-thick amorphous germanium (a-Ge) films. This EC leaves behind periodic …