[HTML][HTML] CMOS-compatible photonic integrated circuits on thin-film ScAlN
Scandium aluminum nitride (ScAlN) has recently emerged as an attractive material for
integrated photonics due to its favorable nonlinear optical properties and compatibility with …
integrated photonics due to its favorable nonlinear optical properties and compatibility with …
[HTML][HTML] High-Quality Single Crystalline Sc0.37Al0.63N Thin Films Enabled by Precise Tuning of III/N Atomic Flux Ratio during Molecular Beam Epitaxy
We attained wurtzite Sc x Al1− x N (0.16≤ x≤ 0.37) thin films by varying the Sc and Al fluxes
at a fixed active nitrogen flux during plasma-assisted molecular beam epitaxy. Atomic fluxes …
at a fixed active nitrogen flux during plasma-assisted molecular beam epitaxy. Atomic fluxes …
A 56 ghz trilayer aln/scaln/aln periodically poled fbar
Emerging wireless communication standards call for higher carrier frequencies, presenting
challenges to frontend filter design for 5G and beyond. Bulk acoustic wave (BAW) resonators …
challenges to frontend filter design for 5G and beyond. Bulk acoustic wave (BAW) resonators …
Nitrogen-polar GaN quantum dots with tunable emission in the ultraviolet-A, B, and C bands
In this study, we report on the molecular beam epitaxy and characterization of nitrogen-polar
(N-polar) GaN quantum dots (QDs) grown on SiC substrates. By varying the growth …
(N-polar) GaN quantum dots (QDs) grown on SiC substrates. By varying the growth …
[HTML][HTML] Polarity controlled ScAlN multi-layer transduction structures grown by molecular beam epitaxy
We report on the molecular beam epitaxial growth and characterization of polarity-controlled
single and multi-layer Scandium Aluminum Nitride (ScAlN) transduction structures grown …
single and multi-layer Scandium Aluminum Nitride (ScAlN) transduction structures grown …
Probing of Polarization Reversal in Ferroelectric (Al, Sc) N Films Using Single‐and Tri‐Layered Structures With Different Sc/(Al+ Sc) Ratio
Abstract Wurtzite‐(Al, Sc) N films are promising candidates for ferroelectric memory devices
owing to their outstanding properties. However, there are many challenges on the way to …
owing to their outstanding properties. However, there are many challenges on the way to …
Multifunctional Ferroelectrics based Devices for Next Generation RF Front-ends
S Nam - 2024 - deepblue.lib.umich.edu
This dissertation presents designs of acoustic wave resonators based on two different
multifunctional ferroelectric materials: Barium Strontium Titanate (BaxSr1-xTiO3, BST) and …
multifunctional ferroelectric materials: Barium Strontium Titanate (BaxSr1-xTiO3, BST) and …