Повышение плотности записи в современных чипах NAND флеш-памяти, достигаемое
как за счет уменьшающегося физического размера ячейки, так и благодаря …

The dissertation considers code constructions and bounds for unreliable, so-called partially
stuck (defective) memory cells. Our new constructions can tolerate partially stuck cells while …

The increasing storage density of modern NAND flash memory chips, achieved both due to
scaling down the cell size, and due to the increasing number of used cell states, leads to a …

This paper focuses on the problem of unreachable memory cells (UMCs). A cell is
considered s-unreachable if it cannot store values for higher levels> s. We first provide …

This work deals with error correction for nonvolatile memories that are partially defective at
some levels. Such memory cells can only store incomplete information since some of their …

Trading Partially Stuck Cells with Errors Page 1 Trading Partially Stuck Cells with Errors
Haider Al Kim, Sven Puchinger, Ludo Tolhuizen, Antonia Wachter-Zeh Institute for …

We construct error-correcting WOM (write-once memory) codes that guarantee correction of
any specified number of errors in q-level memories. The constructions use suitably designed …