Fabrication process of vertical-channel, silicon, field-effect transistors
Y Liu, H Zang - US Patent 11,677,011, 2023 - Google Patents
(57) ABSTRACT A method of fabricating transistors with a vertical gate in trenches includes
lithographing to form wide trenches; forming dielectric in the trenches and filling the trenches …
lithographing to form wide trenches; forming dielectric in the trenches and filling the trenches …
Substrate processing method and substrate processing system
R Asako, T Yamaguchi - US Patent 11,456,184, 2022 - Google Patents
A method is provided. In the method, a substrate having a first region and a second region
on a substrate surface is provided. A film deposition material to form a first chemical bond in …
on a substrate surface is provided. A film deposition material to form a first chemical bond in …