Metal–semiconductor junction in silicon nanostructures: role of interface traps
S Chakrabarty, S Santra, SM Hossain - Applied Physics A, 2024 - Springer
Silicon nanostructures have been prepared on Si wafer using electrochemical etching
process. The transformation of aluminum/nanostructured Si junction from Schottky to Ohmic …
process. The transformation of aluminum/nanostructured Si junction from Schottky to Ohmic …
The mechanism underlying silicon oxide based resistive random-access memory (ReRAM)
In this work, we have inspected the theoretical resistive switching properties of two ReRAM
models based on heterojunction structures of Cu/SiO x nanoparticles (NPs)/Si and Si/SiO x …
models based on heterojunction structures of Cu/SiO x nanoparticles (NPs)/Si and Si/SiO x …
Origin of photo-enhanced hysteretic electrical conductance in nanostructured silicon-based heterojunction
Photo-enhanced hysteretic I–V curves have been observed under reverse bias in a pin
structure containing electrochemically etched nanostructured silicon (Si) sandwiched …
structure containing electrochemically etched nanostructured silicon (Si) sandwiched …
Effect of phonon confinement on photoluminescence from colloidal silicon nanostructures
Room temperature time-resolved photoluminescence (TRPL) of colloidal silicon
nanostructures prepared by repetitive oxidation-etching-oxidation of mechanically milled …
nanostructures prepared by repetitive oxidation-etching-oxidation of mechanically milled …
Electrical transport through array of electrochemically etched silicon nanorods
Random arrays of oxide‐passivated silicon nanorods have been obtained by natural
oxidation of electrochemically etched porous silicon in air. The charge transport through …
oxidation of electrochemically etched porous silicon in air. The charge transport through …
Optically enhanced trap assisted hysteretic IV characteristics of nanocrystalline silicon based pin heterostructure
A pin heterostructure containing electrochemically synthesized silicon (Si) nanorods
embedded in a nonstoichiometric silicon oxide matrix sandwiched as i-layer between p-Si …
embedded in a nonstoichiometric silicon oxide matrix sandwiched as i-layer between p-Si …
Trap-assisted switching in silicon nanocrystal based pin device
S Chakrabarty, S Mandal, S Biswas… - … on Device and …, 2018 - ieeexplore.ieee.org
An all Si, pin device, consisting of a nanostructured porous Si layer sandwiched between a p-
type crystalline Si and an n-type amorphous Si, exhibits current controlled switching …
type crystalline Si and an n-type amorphous Si, exhibits current controlled switching …
Effect of centrifugation time on the optical properties of colloidal silicon nanoparticle
We report synthesis of colloidal suspension of silicon (Si) nanoparticle (NP) with native
silicon dioxide (SiO 2) layer by mechanical milling. Different size distribution of Si NPs in the …
silicon dioxide (SiO 2) layer by mechanical milling. Different size distribution of Si NPs in the …
Negative Differential Resistance in Random Array of Silicon Nanorods
S Chakrabarty, SM Hossain - … and Control: Proceedings of ETES 2018, 2019 - Springer
IV measurement of electrochemically etched porous Si layer with planner electrode
geometry shows negative differential resistance at high bias. This has been explained on …
geometry shows negative differential resistance at high bias. This has been explained on …
[PDF][PDF] colloidal silicon nanostructures, Journal of Luminescence
Room temperature time-resolved photoluminescence (TRPL) of colloidal Si nanostructures
prepared by repetitive oxidation-etching-oxidation of mechanically milled silicon, indicate …
prepared by repetitive oxidation-etching-oxidation of mechanically milled silicon, indicate …