Ultrawide bandgap (UWBG) materials such as diamond, Ga2O3, hexagonal boron nitride (h-
BN) and AlN, are a new class of semiconductors that possess a wide range of attractive …

Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within
the semiconductor device community due to their potential to enhance device performance …

There has been much interest in developing scandium doped aluminum nitride (ScAlN) thin
films for use in electronic devices, due to their excellent piezoMEMS response, large …

The synergistic effect of silicon-based substrates on the physical and chemical properties of
aluminum nitride (AlN) thin films was investigated. AlN thin films were deposited by RF …

Experimental studies devoted to the creation of the modern photocathodes or efficient field
emission cathodes with lowered work function or low/negative electron affinity are reviewed …

Pulsed laser deposition operated by an ultra-short laser beam was used to grow in a
vacuum and at room temperature natively nanostructured thin films of lead telluride (PbTe) …

We propose a field-emission device capped with an insulator film (FEDCIF) similar to the
Spindt-type emitter; its performance and possible merits are demonstrated by simulations …

Experimental studies devoted to the creation of the modern photocathodes or efficient field
emission cathodes with lowered work function or low/negative electron affinity are reviewed …

Дано огляд експериментальних робiт зi створення сучасних фотокатодiв чи
ефективних катодiв для польової емiсiї зi зниженою роботою виходу або …

The synergistic effect of silicon-based substrates on the physical and chemical properties of
aluminum nitride (AlN) thin films is investigated. AlN thin films were deposited by RF …