ReRAM: History, status, and future
Y Chen - IEEE Transactions on Electron Devices, 2020 - ieeexplore.ieee.org
This article reviews the resistive random-access memory (ReRAM) technology initialization
back in the 1960s and its heavily focused research and development from the early 2000s …
back in the 1960s and its heavily focused research and development from the early 2000s …
Conductive bridge random access memory (CBRAM): challenges and opportunities for memory and neuromorphic computing applications
Due to a rapid increase in the amount of data, there is a huge demand for the development
of new memory technologies as well as emerging computing systems for high-density …
of new memory technologies as well as emerging computing systems for high-density …
Nvmexplorer: A framework for cross-stack comparisons of embedded non-volatile memories
Repeated off-chip memory accesses to DRAM drive up operating power for data-intensive
applications, and SRAM technology scaling and leakage power limits the efficiency of …
applications, and SRAM technology scaling and leakage power limits the efficiency of …
Electric-field-induced metal filament formation in cobalt-based CBRAM observed by TEM
Conductive-bridging random access memory (CBRAM) using a cobalt (Co) electrode has
recently featured a CMOS-compatible process, excellent data retention, and a sub-μA …
recently featured a CMOS-compatible process, excellent data retention, and a sub-μA …
Insertion of Ag Layer in TiN/SiNx/TiN RRAM and Its Effect on Filament Formation Modeled by Monte Carlo Simulation
In this study, the electrical characteristics of TiN/SiNx/TiN and TiN/Ag/SiNx/TiN RRAMs were
thoroughly investigated through IV measurements. Our novel Ag-inserted silicon nitride …
thoroughly investigated through IV measurements. Our novel Ag-inserted silicon nitride …
Rational Design on Controllable Cation Injection with Improved Conductive-Bridge Random Access Memory by Glancing Angle Deposition Technology toward …
YC Shih, YC Shen, YK Cheng… - … Applied Materials & …, 2021 - ACS Publications
A conductive-bridge random access memory (CBRAM) has been considered a promising
candidate for the next-generation nonvolatile memory technology because of its excellent …
candidate for the next-generation nonvolatile memory technology because of its excellent …
Switching Characteristics and Mechanism Using Al2O3 Interfacial Layer in Al/Cu/GdOx/Al2O3/TiN Memristor
Resistive switching characteristics by using the Al2O3 interfacial layer in an
Al/Cu/GdOx/Al2O3/TiN memristor have been enhanced as compared to the Al/Cu/GdOx/TiN …
Al/Cu/GdOx/Al2O3/TiN memristor have been enhanced as compared to the Al/Cu/GdOx/TiN …
Zeolitic-imidazolate framework (ZIF-67) based bipolar memristor for nonvolatile ReRAM application
In the realm of next-generation nonvolatile memories, there is a strong demand for resistive
random access memory (ReRAM) devices that are affordable, stable, and simple to produce …
random access memory (ReRAM) devices that are affordable, stable, and simple to produce …
Impact of inert electrode on the volatility and non-volatility switching behavior of SiO2-based conductive bridge random access memory devices
C Tsioustas, P Bousoulas, G Kleitsiotis… - Applied Physics …, 2024 - pubs.aip.org
The development of disruptive artificial neural networks (ANNs) endowed with brain-inspired
neuromorphic capabilities is emerging as a promising solution to deal with the challenges of …
neuromorphic capabilities is emerging as a promising solution to deal with the challenges of …
Oxide-Electrolyte Thickness Dependence Diode-Like Threshold Switching and High on/off Ratio Characteristics by Using Al2O3 Based CBRAM
Diode-like threshold switching and high on/off ratio characteristics by using an
Al/Ag/Al2O3/TiN conductive bridge resistive random access memories (CBRAM) have been …
Al/Ag/Al2O3/TiN conductive bridge resistive random access memories (CBRAM) have been …