We review the technology of Ge 1− x Sn x-related group-IV semiconductor materials for
developing Si-based nanoelectronics. Ge 1− x Sn x-related materials provide novel …

Diffusion experiments of phosphorus (P), arsenic (As), and antimony (Sb) in high purity
germanium (Ge) were performed at temperatures between 600 and 920 C⁠. Secondary ion …

An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

The diffusion of self-atoms and n-type dopants such as phosphorus, arsenic, and antimony
in germanium was studied by means of isotopically controlled multilayer structures doped …

The electronic properties and thermal stability of centers incorporating a vacancy and a
group-V-impurity atom (P, As, Sb, or Bi) in Ge crystals have been investigated. The vacancy …

Defects in semiconductors have been studied for many years, in many cases with a view
toward controlling their behaviour through various forms of “defect engineering”. For …

Multimetallic clusters can be described as building blocks in intermetallics, compounds
prepared from all metals and/or semi-metals, and in Zintl phases, a subset of intermetallics …

Ions arriving at a semiconductor surface with very low energy (2–8 eV) are interacting with
defects deep inside the semiconductor. Several different defects were removed or modified …

We present a comprehensive spin-density functional modeling study of the structural and
electronic properties of donor-vacancy complexes (PV, As V, Sb V, and Bi V) in Ge crystals …

Doped and alloyed germanium nanocrystals (Ge NCs) are potential candidates for a variety
of applications such as photovoltaics and near IR detectors. Recently, bismuth (Bi) as an n …