This article presents a review of physical, analytical, and compact models for oxide‐based
RRAM devices. An analysis of how the electrical, physical, and thermal parameters affect …

The paper deals with the modeling of memristors operating in extremely large memristive
networks such as crossbar structures for memory and computational circuits, memristor …

Designing a SPICE model is a critical step toward understanding the behavior of the
resistive random access memory (RRAM) devices when integrated in memory design for the …

One selector‐one resistor (1S‐1R) configuration is desirable to use in conductive bridge
resistive random‐access memory (CBRAM) and resistive random‐access memory (RRAM) …

This paper presents an enhanced analytical model for bipolar resistive switching in
Pt/Ta2O5/TaOx/Pt Resistive Random-Access Memory (RRAM) devices. The conduction …

Nonvolatile memories have emerged in recent years and have become a leading candidate
towards replacing dynamic and static random-access memory devices. In this article, the …

Memristors have the potential to significantly impact the memory market, and have
demonstrated the potential for analog computing within a sub-class of neuro-inspired …

An electrical model of a multi-level Ta 2 O 5/TaO x resistive random-access memory
(ReRAM) has been presented. The model is based on tunnelling current which is the …

The practical realization of neuro-memristive systems requires highly accurate simulation
models, robust devices and validations on device characteristics. This chapter covers the …

The effect of Zr content on resistive switching properties of Zr x Hf 1–x O 2-based metal-
oxide-semiconductor (MOS) devices has been studied. The electrical characteristics and x …