Metal-semiconductor-metal photodetectors based on graphene/p-type silicon Schottky junctions
Metal-semiconductor-metal (MSM) photodetectors based on graphene/p-type Si Schottky
junctions are fabricated and characterized. Thermionic emission dominates the transport …
junctions are fabricated and characterized. Thermionic emission dominates the transport …
Color-selective and CMOS-compatible photodetection based on aluminum plasmonics.
A color-selective, band-engineered photodetector is demonstrated. The device uses two
Schottky junctions to accumulate charge in an energy well, which results in photocurrent …
Schottky junctions to accumulate charge in an energy well, which results in photocurrent …
III-V nitride semiconductors: Applications and devices
TY Edward - 2002 - books.google.com
The concepts in this book will provide a comprehensive overview of the current state for a
broad range of nitride semiconductor devices, as well as a detailed introduction to selected …
broad range of nitride semiconductor devices, as well as a detailed introduction to selected …
Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate
F Xie, H Lu, X Xiu, D Chen, P Han, R Zhang… - Solid-state electronics, 2011 - Elsevier
Metal-semiconductor–metal ultraviolet photodetectors are fabricated on low-defect-density
homoepitaxial GaN layer on bulk GaN substrate. The dislocation density of the …
homoepitaxial GaN layer on bulk GaN substrate. The dislocation density of the …
Ultra-low dark current AlGaN-based solar-blind metal–semiconductor–metal photodetectors for high-temperature applications
F Xie, H Lu, D Chen, X Ji, F Yan, R Zhang… - IEEE Sensors …, 2012 - ieeexplore.ieee.org
Solar-blind metal-semiconductor-metal (MSM) photodetectors (PDs) with Ni/Au semi-
transparent interdigitated contact electrodes are fabricated on Al 0.4 Ga 0.6 N epi-layer …
transparent interdigitated contact electrodes are fabricated on Al 0.4 Ga 0.6 N epi-layer …
GaN Schottky metal–semiconductor–metal UV photodetectors on Si (111) grown by ammonia-MBE
L Ravikiran, K Radhakrishnan… - IEEE Sensors …, 2016 - ieeexplore.ieee.org
For the development of GaN-based ultraviolet (UV) photodetectors, a simple epilayer
structure consisting of GaN (600 nm)/AlN (200 nm) was grown on 100-mm Si substrate using …
structure consisting of GaN (600 nm)/AlN (200 nm) was grown on 100-mm Si substrate using …
Experimental characterization of single-walled carbon nanotube film-Si Schottky contacts using metal-semiconductor-metal structures
A Behnam, JL Johnson, Y Choi, MG Ertosun… - Applied physics …, 2008 - pubs.aip.org
We demonstrate that single-walled carbon nanotube (CNT) films make a Schottky contact on
silicon by experimentally characterizing metal-semiconductor-metal (MSM) structures. We …
silicon by experimentally characterizing metal-semiconductor-metal (MSM) structures. We …
High-performance ultraviolet photodetectors based on lattice-matched InAlN/AlGaN heterostructure field-effect transistors gated by transparent ITO films
L Li, D Hosomi, Y Miyachi, T Hamada… - Applied Physics …, 2017 - pubs.aip.org
We demonstrate high-performance ultraviolet photodetectors (UV-PDs) based on lattice-
matched (LM) InAlN/AlGaN heterostructure field-effect transistors (HFETs) gated by …
matched (LM) InAlN/AlGaN heterostructure field-effect transistors (HFETs) gated by …
Metal–semiconductor–metal ultraviolet avalanche photodiodes fabricated on bulk GaN substrate
F Xie, H Lu, DJ Chen, XQ Xiu, H Zhao… - IEEE electron device …, 2011 - ieeexplore.ieee.org
We report the first demonstration of a GaN-based planar metal-semiconductor-metal (MSM)
ultraviolet (UV) avalanche photodiode (APD). The MSM APD with semitransparent …
ultraviolet (UV) avalanche photodiode (APD). The MSM APD with semitransparent …
4H-SiC δnip Extreme Ultraviolet Detector With Gradient Doping-Induced Surface Junction
Z Wang, D Zhou, W Xu, Y Wang, F Ren… - IEEE Electron …, 2022 - ieeexplore.ieee.org
Extreme ultraviolet (EUV) detectors are key components required in many critical
applications. In this work, a high-performance 4H-SiC-ip EUV detector with gradient doping …
applications. In this work, a high-performance 4H-SiC-ip EUV detector with gradient doping …