Since the first report of amorphous In–Ga–Zn–O based thin film transistors, interest in oxide
semiconductors has grown. They offer high mobility, low off-current, low process …

Abstract Vertical three-dimensional (3D) integration is a highly attractive strategy to integrate
a large number of transistor devices per unit area. This approach has emerged to …

In this article, heterogeneous complementary field-effect-transistor (CFET) constructed by
vertically stacking amorphous indium gallium zinc oxide (a-IGZO) n-channel on poly-Si p …

This work demonstrates p-type SnO thin film transistors, where the SnO active layers were
deposited with atomic layer deposition (ALD) using the Sn (II) alkoxide precursor, Sn (II) bis …

The development of transparent electronics has advanced metal–oxide–semiconductor Thin-
Film transistor (TFT) technology. In the field of flat-panel displays, as basic units, TFTs play …

Atomic layer deposition (ALD) is a widely recognized technique for depositing ultrathin
conformal films with excellent thickness control at Ångström or (sub) monolayer level …

This paper reviews recent developments in the fabrication of high‐performance n‐channel
metal‐oxide thin‐film transistors (TFTs) through atomic‐layer deposition (ALD), which are …

High-performance p-type thin-film transistors (TFTs) with high field-effect mobility and high
on/off current ratios (I on/I off) were fabricated by engineering the microstructure and surface …

Over the past decade, SnO has been considered a promising p-type oxide semiconductor.
However, achieving high mobility in the fabrication of p-type SnO films is still highly …

Tin monoxide (SnO) has been studied widely over the past several decades due to its
promising theoretical p‐type performance. However, limited fabrication processes due to the …