Power metal-oxide–semiconductor field-effect transistors (MOSFETs) play a vital role in
numerous everyday applications that require an extended lifetime. Therefore, it is important …

Recently, silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors
(MOSFETs) with a half-bridge configuration have been developed for power conversion …

The application of silicon carbide (SiC) MOSFETs in the field of high voltage and high
frequency brings the major challenge of high switching loss. To give full advantage of its …

Parasitic capacitance of silicon carbide (SiC) metal–oxide–semiconductor field effect
transistor (MOSFET) significantly affects the operation of power circuits and their …

In order to simulate resonances in power electronic circuits and for EMC predictions,
detailed high-frequency impedance models of the components must be used. Models with a …

Equipment with high efficiency, high power density, reduced size and low cost are in
demand in the automotive industry. This work presents a method to design and model a high …

Accurate PowerMOS SPICE models and reliable circuits for device prototyping are crucial to
provide meaningful feedback to platform developers. System simulation is key in speeding …

The use of wide-bandgap semiconductors in modern power electronics creates new
challenges in EMC. These result, among other things, from high frequencies and steep …

The power metal-oxide-semiconductor field-effect transistor (MOSFET) is a critical device for
power control and power conversion systems, the accurate calculation of static and dynamic …